| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The HMC464-SX is a GaAs RF Amplifier Die from Hittite Microwave, designed for operation across a wide frequency range of 2 GHz to 20 GHz. This component offers a nominal gain of 16 dB and a low noise figure of 4 dB, making it suitable for various RF applications.
Key electrical characteristics include a P1dB compression point of 26 dBm and an OIP3 third-order intercept of 30 dBm. The amplifier operates with a supply voltage of 8 V and has a power dissipation of 4.64 W. The input return loss is specified at 17 dB.
This device is supplied in a Die package and is designed for SMD/SMT mounting. It operates within a temperature range of -55 °C to +85 °C. The HMC464-SX is part of the HMC464G series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC464-SX operates from 2 GHz to 20 GHz.
The HMC464-SX has a nominal gain of 16 dB.
The noise figure for the HMC464-SX is 4 dB.
The P1dB compression point is 26 dBm.
The HMC464-SX operates with a supply voltage of 8 V.
The HMC464-SX has minimum and maximum operating temperatures of -55 °C and 85 °C, respectively.
The HMC464-SX is supplied in a Die package.