| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,520 pcs
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4520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMC452QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier manufactured by Hittite Microwave Corporation. It operates across a frequency range of 0.4 to 2.2 GHz.
Key electrical specifications include a typical gain of 22.5 dB at 400 MHz and 9 dB at 2.1 GHz. The amplifier offers a typical output IP3 of +48 dBm at 2.1 GHz and a typical noise figure of 7.5 dB. It requires a single +5V supply and features integrated power control (VPD) for power down or output power/current control.
Packaged in a miniature 16-lead QSOP plastic package, the HMC452QS16G is suitable for applications requiring high dynamic range amplifiers. Its typical applications include Cellular/PCS/3G, WLL, ISM, and Fixed Wireless applications, as well as GSM, GPRS & EDGE, CDMA & W-CDMA, and CATV/Cable Modem systems.
The amplifier utilizes a minimum number of external components and is designed for surface mount technology (SMT). The package size is 29.4 mm^2.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC452QS16G requires a +5V supply for both Vs and VPD.
The HMC452QS16G comes in a QSOP-16 surface-mount package.
It covers five bands: 400-410 MHz, 450-496 MHz, 810-960 MHz, 1710-1990 MHz, and 2010-2170 MHz.
Typical gain is 22.5 dB at 400 MHz and 9 dB at 2100 MHz.
Typical P1dB is 30.5 dBm at 400-496 MHz, 30 dBm at 810-960 MHz, and 31 dBm at 1710-2170 MHz.
The typical supply current (Icq) is 485 mA.
The typical noise figure is 7.5 dB.