| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,758 pcs
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4758 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMC408LP3E is a high-efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC Power Amplifier designed for operation between 5.1 to 5.9GHz. This amplifier provides a typical gain of 20dB and delivers +32.5dBm of saturated power with 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms, simplifying integration into RF circuits.
Key electrical characteristics include a supply current of 750mA and a power dissipation of 4710mW. The device operates within a temperature range of -40℃ to 85℃. It is housed in a 16-pin VFQFN surface-mount package, suitable for various RF applications.
This amplifier is designed for applications requiring high power and efficiency within the specified frequency band. Its features, such as power-down capability and internal input matching, make it a versatile component for RF designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
5V.
VFQFN-16 surface mount package.
-40°C to +85°C.
20dB typical at 5.8GHz.
+32.5dBm.
+30dBm.