| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The HMC407MS8GETR is a high-efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power Amplifier from Analog Devices. It operates within the 5 to 7 GHz frequency range and is designed for applications such as UNII and HiperLAN.
This amplifier provides 15 dB of gain and +29 dBm of saturated power with 28% PAE from a +5V supply voltage. It requires no external matching, offering a true 50 Ohm match at both input and output. The device features power-down capability to conserve current when not in use.
Packaged in a low-cost, surface-mount 8-lead MSOP with an exposed pad for improved RF and thermal performance, the HMC407MS8GETR is suitable for various 5-7 GHz applications. Key electrical specifications include a noise figure of 5.5 dB, an input return loss of 12 dB, and an output return loss of 15 dB. The typical supply current is 230 mA at 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC407MS8GETR operates between 5 and 7 GHz.
The typical gain of the HMC407MS8GETR is 15 dB.
The saturated output power (Psat) is +29 dBm.
The noise figure is 5.5 dB.
The HMC407MS8GETR requires a supply voltage of +5V.
The HMC407MS8GETR is in an 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad package.
The HMC407MS8GETR is RoHS3 Compliant.