| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,205 pcs
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1205 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The HMC407MS8G is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power Amplifier designed for 5 to 7 GHz applications. It operates from a +5V supply voltage and requires no external matching, providing a true 50 Ohm match at both input and output.
This amplifier delivers 15 dB of gain, +29 dBm of saturated power, and 28% Power Added Efficiency (PAE). It also features power-down capability to conserve current when not in use. The amplifier is housed in a low-cost, surface-mount 8-leaded package with an exposed base for improved RF and thermal performance.
Typical applications for the HMC407MS8G include UNII and HiperLAN systems. Key electrical specifications include a frequency range of 5-7 GHz, input return loss of 12 dB, and output return loss of 15 dB. The output power for 1 dB compression (P1dB) is typically 21-25 dBm, and the output third-order intercept (IP3) is 32-37 dBm. The noise figure is 5.5 dB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC407MS8G operates in the 5 to 7 GHz frequency range.
The HMC407MS8G amplifier typically provides 15 dB of gain.
The saturated output power (Psat) of the HMC407MS8G is +29 dBm.
The HMC407MS8G has a typical power added efficiency (PAE) of 28%.
The HMC407MS8G requires a typical supply voltage of +5V.
The HMC407MS8G is supplied in an 8-MSOP surface mount package.