HMC349MS8G
Hittite Microwave
The Hittite Microwave HMC349MS8G is a high isolation, non-reflective SPDT switch operating from DC to 4 GHz. It features a low insertion loss and a compact MS8G SMT package.
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12,053 pcs
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12053 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMC349MS8GE from Hittite Microwave is a high isolation Single Pole Double Throw (SPDT) non-reflective switch designed for applications from DC to 4 GHz. It offers excellent performance characteristics, including up to 70 dB isolation at 1 GHz and 57 dB at 2 GHz, with a low insertion loss of 0.8 dB up to 1 GHz. The switch boasts a high input IP3 of +52 dBm and handles power up to a +31 dBm P1dB compression point.
This switch utilizes a single positive voltage control (0/+5V) and features an "all off" state when the enable input is set high. It is housed in an ultra-small MS8G SMT package, making it suitable for space-constrained designs. Typical applications include basestation infrastructure, MMDS & 3.5 GHz WLL, CATV/CMTS, and test instrumentation.
The HMC349MS8GE is constructed using GaAs MESFET technology and is ideal for cellular, PCS, and 3G basestation applications. Its non-reflective design and exposed ground paddles contribute to its robust performance.
| Qty | Low | High |
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| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The switch operates with a single positive control voltage of 0/+5 V.
The HMC349MS8GE is housed in an MSOP8G surface mount package.
The switch covers DC to 4 GHz.
Typical insertion loss is 0.8 dB at 1 GHz.
Typical isolation is 70 dB at 1 GHz.
The input power for 1 dB compression is +31 dBm from 0.25 to 4 GHz.
Rise/fall time is 40 ns and on/off time is 120 ns.