| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMC327MS8GETR is a high-efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier designed for operation between 3 and 4 GHz. This amplifier is housed in a low-cost, surface-mount 8-leaded package with an exposed base for enhanced RF and thermal performance.
Key electrical specifications include a typical gain of 21 dB, a saturated output power of +30 dBm at 45% PAE, and an output P1dB of +27 dBm. It operates from a single +5V supply and includes power-down capability to conserve current when not in use. The amplifier requires minimal external components for operation.
Typical applications for the HMC327MS8GETR include Wireless Local Loop (WLL), WiMAX & Fixed Wireless, Access Points, and Subscriber Equipment. Its compact MSOP package and robust performance make it suitable for various wireless communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC327MS8GETR operates in the frequency range of 3 to 4 GHz.
The typical gain of the HMC327MS8GETR is 21 dB.
The saturated output power of the HMC327MS8GETR is +30 dBm.
The noise figure for the HMC327MS8GETR is 5 dB.
The HMC327MS8GETR requires a single 5V supply.
The HMC327MS8GETR is in an 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad package.
The HMC327MS8GETR is a surface mount device.