| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Approval Agency | |
| Frequency Range | |
| Mounting Type | |
| Noise Figure | |
| Operating Voltage | |
| SVHC Present |
The HMC313E is a high-performance GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier designed for various RF applications. It operates efficiently from a single +5V supply, drawing only 50 mA of current.
This surface-mount SOT26 amplifier provides a typical gain of 17 dB across a frequency range of DC to 6 GHz. It delivers a P1dB output power of +14 dBm and a saturated output power of +15 dBm at 1.0 GHz. The device also offers a typical output IP3 of +27 dBm and a noise figure of 6.5 dB.
The HMC313E is suitable as a broadband gain stage or can be used with external matching for optimized narrow-band applications. Its compact SOT26 package makes it ideal for space-constrained designs. Applications include MMDS, Wireless Local Loop, and UNII & HiperLAN systems.
Key electrical specifications include a minimum input return loss of 7 dB and a minimum output return loss of 6 dB, with reverse isolation typically at 30 dB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC313E amplifier offers a typical gain of 17 dB.
The HMC313E operates from a single +5V supply.
The P1dB output power for the HMC313E is typically +14 dBm at 1.0 GHz.
The HMC313E comes in a SOT26 surface mount package.
The HMC313E amplifier operates over a frequency range of DC to 6 GHz.