| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
463 pcs
|
463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HMC311LP3TR is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC amplifier designed for surface mount applications. It operates across a frequency range of DC to 6 GHz, making it suitable for various RF applications.
Key electrical characteristics include a supply voltage of 5V and a supply current of 74 mA. The amplifier provides a gain of 14 dB and has a power dissipation of 0.339 W. It is designed to operate within a temperature range of -40°C to 85°C.
The component is housed in a QFN-16 package and utilizes a surface mount style. This configuration is ideal for integration into compact electronic designs. The HMC311LP3TR is supplied on tape and reel for automated assembly processes.
Applications for this RF amplifier include Cellular/PCS/3G, Fixed Wireless & WLAN, CATV & Cable Modem, and Microwave Radio systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC311LP3TR operates across a frequency range of 0 Hz to 6 GHz.
The HMC311LP3TR requires a supply voltage of 5 V.
The HMC311LP3TR provides a typical gain of 14 dB.
The HMC311LP3TR can operate within a temperature range of -40 °C to 85 °C.
The HMC311LP3TR is supplied in a QFN-16 package.
The HMC311LP3TR has 16 pins.
The power dissipation of the HMC311LP3TR is 0.339 W.