| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The HMC311LP3ETR is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC amplifier designed for applications spanning DC to 6 GHz. This versatile amplifier delivers a typical gain of 14.5 dB and can achieve output power levels up to +15.5 dBm at 1 dB compression. With an output third-order intercept point (OIP3) of +32 dBm, it ensures excellent linearity, making it suitable for high-performance RF and microwave systems.
The device operates from a single +5 V supply, drawing a typical current of 56 mA, and features 50 Ohm matched inputs and outputs, simplifying integration into various circuit designs. Its compact 3 mm × 3 mm QFN package facilitates high-density PCB layouts.
Key applications include Cellular, PCS, and 3G communication systems, Fixed wireless and WLAN, CATV and cable modem infrastructures, and Microwave radio systems. The amplifier's robust InGaP HBT technology ensures reliable performance with excellent gain stability over temperature variations. Its low noise figure and high linearity contribute to superior signal quality, essential for modern communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC311LP3ETR operates over a frequency range of 0Hz to 6GHz.
The typical gain of the HMC311LP3ETR is 14.5dB.
It comes in a 16-VFQFN Exposed Pad package with a 16-QFN (3x3) device package.
The supply voltage is 5V.
The noise figure is 4.5dB.
-40°C to +85°C.