| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,025 pcs
|
2025 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The HMC1126 is a Gallium Arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. It operates across a wide frequency range of 2 GHz to 50 GHz, making it suitable for various high-frequency applications.
Key electrical specifications include a typical gain of 11 dB, a typical output power for 1 dB compression (P1dB) of 17.5 dBm, and a typical saturated output power (PSAT) of 21 dBm. The amplifier also provides a typical output third-order intercept point (IP3) of 28 dBm. It requires a supply voltage of 5 V and draws a current of 65 mA. The input and output are internally matched to 50 Ω, which simplifies integration into multichip modules (MCMs).
This component is supplied as a die, intended for surface mount applications. The die size is 2.3 mm x 1.45 mm x 0.05 mm. Its performance characteristics make it suitable for applications such as test instrumentation, microwave radios, VSATs, military and space systems, telecommunications infrastructure, and fiber optics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC1126 operates from 2 GHz to 50 GHz.
The HMC1126 provides a typical gain of 11 dB.
The typical P1dB for the HMC1126 is 17.5 dBm.
The HMC1126 requires a supply voltage of 5 V.
The HMC1126 consumes a typical current of 65 mA.
The HMC1126 is supplied as a die.