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2,758 pcs
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2758 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The HMC1099PM5ETR is a Gallium Nitride (GaN) broadband power amplifier designed for high-performance applications. It delivers a typical output power of 41.5 dBm (10W) with a Power Added Efficiency (PAE) of up to 60% at an input power of 27 dBm. The amplifier operates across an instantaneous bandwidth from 0.01 GHz to 1.1 GHz.
Featuring a high small signal gain of 20 dB typical, the HMC1099PM5ETR is suitable for pulsed or continuous wave (CW) applications. It requires a supply voltage of 28 V and draws a quiescent current of 100 mA. The device includes internal prematching, simplifying external tuning for optimal performance.
This power amplifier is available in a compact 5 mm × 5 mm, 32-lead LFCSP package, making it suitable for surface mount applications. Its robust design and performance characteristics make it ideal for use in wireless infrastructure, test and measurement equipment, commercial and military radars, and general-purpose transmitter amplification.
The HMC1099PM5ETR is designed for extended battery operation in public mobile radios and serves as a power amplifier stage for wireless infrastructures.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HMC1099PM5ETR delivers a typical output power of 41.5 dBm (10 W).
This amplifier has an instantaneous bandwidth from 0.01 GHz to 1.1 GHz.
The typical small signal gain is 20 dB.
The datasheet specifies a supply voltage of 28 V.
The component is supplied in a 32-LFCSP-CAV (5x5) package.