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HMC1099LP5DE The Analog Devices HMC1099LP5DE is a Gallium Nitride (GaN) broadband power amplifier. It delivers over 10W with high efficiency across a wide frequency range.
Mfr Part #:

HMC1099LP5DE

Available from 1 distributors
Mfr Name: Analog Devices / Maxim Integrated
Analog Devices / Maxim Integrated
The Analog Devices HMC1099LP5DE is a Gallium Nitride (GaN) broadband power amplifier. It delivers over 10W with high efficiency across a wide frequency range.
Total Stock: 1 pcs
$ Price Range: $0.99

HMC1099LP5DE Available from 1 distributor

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HMC1099LP5DE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Gain Flatness
Instantaneous Bandwidth
Mounting Type
Noise Figure
Output Power (PSAT)
Power
Power Added Efficiency (PAE)
RF Type
Small Signal Gain
Storage Temperature
Supplier Device Package
Tape & Reel
Test Frequency
Voltage

HMC1099LP5DE Description

Short technical summary and product information.

The HMC1099LP5DE from Analog Devices is a Gallium Nitride (GaN) broadband power amplifier designed for high-power applications. It delivers over 10W with a typical saturated output power (PSAT) of 40.5 dBm and a high power added efficiency (PAE) of 69% across an instantaneous bandwidth from 0.01 GHz to 1.1 GHz.

 

This amplifier features a typical small signal gain of 18.5 dB and a gain flatness of ±0.5 dB. It operates with a supply voltage of 28V and draws 100mA of current. The HMC1099LP5DE is suitable for pulsed or continuous wave (CW) applications.

 

Designed for ease of integration, the HMC1099LP5DE includes internal prematching and requires simple, compact external tuning using surface-mount components. It is housed in a 32-lead, 5 mm × 5 mm LFCSP package, making it suitable for surface mount applications.

 

Key applications include wireless infrastructure, radars, public mobile radios, and general-purpose transmitter amplification, offering extended battery operation for mobile radios.

HMC1099LP5DE Quick Information

Product Type: RF Amplifier
Canonical Name: HMC1099LP5DE Gallium Nitride (GaN) Broadband Power Amplifier
Subcategory: RF Amplifier

HMC1099LP5DE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HMC1099LP5DE Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

HMC1099LP5DE Features

  • High saturated output power: 40.5 dBm typical.
  • High small signal gain: 18.5 dB typical.
  • High power added efficiency: 69% typical.
  • Wide instantaneous bandwidth: 0.01 GHz to 1.1 GHz.
  • Compact 32-lead LFCSP package.

HMC1099LP5DE Applications

  • Power amplifier for wireless infrastructure.
  • Suitable for commercial and military radars.
  • Ideal for public mobile radio systems.
  • General-purpose transmitter amplification.
  • Enables extended battery operation.

HMC1099LP5DE FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical saturated output power of the HMC1099LP5DE?

The typical saturated output power (PSAT) is 40.5 dBm.

What is the frequency range for the HMC1099LP5DE?

The instantaneous bandwidth is from 0.01 GHz to 1.1 GHz.

What is the typical power added efficiency (PAE) of this amplifier?

The typical power added efficiency is 69%.

What supply voltage does the HMC1099LP5DE require?

The required supply voltage is 28V.

What package type is the HMC1099LP5DE supplied in?

It is supplied in a 32-lead, 5 mm × 5 mm LFCSP package.

What is the typical small signal gain?

The typical small signal gain is 18.5 dB.

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