| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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213 pcs
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213 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The HIP6601B, HIP6603B, and HIP6604B are high-frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers, combined with HIP63xx or ISL65xx series PWM controllers, form a complete core-voltage regulator solution for advanced microprocessors.
The HIP6601B drives the lower gate in a synchronous rectifier to 12V, while the upper gate can be independently driven over a range from 5V to 12V. The output drivers have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
This device is available in an 8-lead SOIC package and is surface-mountable. It operates within a temperature range of 0°C to 125°C (TJ). The HIP6601BCB is designed for applications such as core voltage supplies for microprocessors and high-frequency, low-profile DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range for the HIP6601BCB is 0°C to 125°C (TJ).
The HIP6601BCB is available in an 8-SOIC package.
The HIP6601BCB is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the HIP6601BCB is 1 Unlimited.
The operating voltage range for the HIP6601BCB is 10.8V to 13.2V.
The HIP6601BCB has 2 MOSFET drivers.
The high-side voltage for the HIP6601BCB is 15V.