| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,975 pcs
|
3975 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
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| Logic Voltage | |
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| Rise | |
| Supplier Device Package | |
| Voltage |
The Renesas HIP2211FR8Z is a high-performance Half Bridge Gate Driver designed for power management applications. It features a high-side voltage capability of 115V and can handle currents of 3A to 4A. The device operates within a supply voltage range of 6V to 18V, with logic voltages at 1.47V and 1.84V.
Designed for efficient operation, the HIP2211FR8Z offers independent channels and N-Channel MOSFET gate drive. It boasts fast switching characteristics with rise times of 20ns. The operating temperature range is -40°C to 125°C (TJ), ensuring reliability in demanding environments.
This gate driver comes in an 8-VDFN Exposed Pad package, specifically a 4x4mm footprint, and utilizes a surface mount type for easy integration into PCBs. Its RoHS3 compliant status and Moisture Sensitivity Level 1 rating further enhance its suitability for various industrial and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
6V to 18V.
3A to 4A.
N-Channel MOSFETs.
-40°C to +125°C (junction).
8-VDFN exposed pad, supplier package 8-DFN (4x4).
Two independent channels.