HIP2100IBZT7A
Renesas
HIP2100IBZT7A is a half-bridge gate driver IC from Renesas. It features surface mount mounting, operating temperature range -55°C to 150°C, and comes in an 8-SOIC package.
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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59 pcs
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59 pcs | On Request | 1 | On Request | On Request | 11635 | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas HIP2100IBZT is an integrated circuit designed as a half-bridge gate driver. It is housed in an 8-SOIC package and supports surface mount installation. This component is engineered to drive N-channel MOSFETs and offers independent channel control.
Key electrical specifications include an operating voltage range of 9V to 14V and logic voltages of 4V and 7V. The device can handle currents of 2A and features a high side voltage capability of 114V. The rise time is specified at 10ns. The operating temperature range is from -55°C to 150°C (TJ).
This gate driver is suitable for applications requiring efficient switching of power transistors in a half-bridge configuration. Its robust operating temperature range and specific electrical characteristics make it a versatile component for various industrial and automotive power control systems.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 9V to 14V.
The HIP2100IBZT is available in an 8-SOIC surface-mount package.
The operating temperature range is -55°C to 150°C.
It is a half-bridge gate driver.
The peak output current is 2A per channel.
It drives N-channel MOSFETs.
It has two independent drivers.