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HIP0061AS2 The HIP0061AS2 is a 3-transistor N-channel MOSFET array from SIL, offering 60V drain-source voltage and 3.5A continuous drain current. It features ESD protection and a low on-resistance of 0.265 Ohm.
Mfr Part #:

HIP0061AS2

Available from 1 distributors
Mfr Name: SIL
SIL
The HIP0061AS2 is a 3-transistor N-channel MOSFET array from SIL, offering 60V drain-source voltage and 3.5A continuous drain current. It features ESD protection and a low on-resistance of 0.265 Ohm.
✓ Total Stock: 3,400 pcs
$ Price Range: $0.75

HIP0061AS2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,400 pcs
On Request
3400 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HIP0061AS2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
ESD Protection
Mounting Type
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HIP0061AS2 Description

Short technical summary and product information.

The HIP0061AS2 is a power MOSFET array from SIL, featuring three matched N-Channel enhancement mode MOS transistors in a common source configuration. This device operates at a maximum drain-source voltage of 60V and can handle a continuous drain current of 3.5A. It boasts a low on-resistance of 0.265 Ohm and includes integrated ESD protection for enhanced reliability.

 

The advanced Harris PASIC2 process technology utilized in the HIP0061AS2 ensures outstanding device performance. This MOSFET array is suitable for various power management applications requiring robust switching capabilities and efficient power handling. Its common source configuration and N-channel enhancement mode make it a versatile component for circuit designs demanding reliable performance.

 

Designed for surface mount applications, the HIP0061AS2 facilitates integration into compact electronic systems. The component's specifications make it a suitable choice for designers looking for a dependable power MOSFET solution with built-in protection features.

HIP0061AS2 Quick Information

Product Type: Power MOSFET Array
Canonical Name: HIP0061AS2 60V 3.5A 3-Channel N-Channel Power MOSFET Array
Subcategory: Power Management - Specialized

HIP0061AS2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HIP0061AS2 Estimated Pricing

Qty Low High
1+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

HIP0061AS2 Features

  • Three N-channel MOSFET transistors.
  • 60V maximum drain-source voltage.
  • 3.5A continuous drain current.
  • Low 0.265 Ohm on-resistance.
  • Integrated ESD protection.

HIP0061AS2 Applications

  • Power switching applications.
  • Motor control circuits.
  • Power supply designs.
  • General purpose power management.

HIP0061AS2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage (Vds) is 60V.

What is the continuous drain current?

The maximum continuous drain current (Id) is 3.5A.

What is the on-resistance?

The on-resistance (Rds) is 0.265 Ohm.

Does this device have ESD protection?

Yes, it includes ESD protection.

How many transistors are in the array?

The array contains 3 transistors.

What is the channel type?

The channel type is N-Channel.

What is the mounting type?

The mounting type is Surface Mount.

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