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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,414 pcs
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1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HGTP7N60C3D is a 600V, 14A N-Channel IGBT from On Semiconductor, part of the UFS series. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device includes an anti-parallel hyperfast diode, making it suitable for high voltage switching applications at moderate frequencies.
Key electrical specifications include a collector-emitter voltage of 600V, continuous collector current of 14A at 25°C, and a power dissipation of 60W. The typical VCE(sat) is 2V at VGE=15V and IC=7A. Switching characteristics include a gate charge of 23nC, turn-on energy of 165µJ, and turn-off energy of 600µJ under test conditions of 480V, 7A, 50Ω, and 15V. The typical fall time at 150°C is 140ns.
The device is housed in a TO-220-3 package with through-hole mounting. It is designed for applications such as AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors. The IGBT has a short circuit rating and low conduction loss, making it efficient for high voltage switching.
600V.
14A at TC=25°C.
23nC under test conditions of 480V, 7A, 50Ω, 15V.
2V maximum at VGE=15V, IC=7A.
Turn-on energy is 165µJ and turn-off energy is 600µJ under 480V, 7A, 50Ω, 15V.
TO-220-3 through-hole package.
RoHS status is listed as RoHS3 Compliant, but this is unverified.