Mfr Part #:

HGTP3N60A4

HGTP3N60A4 is a 600V, 17A N-channel IGBT from On Semiconductor, designed for high-frequency switching applications. It features a low Vce(on) of 2.7V and fast switching speeds.

✓ Total Stock: 2,092 pcs

$ Price Range: $1.95

HGTP3N60A4 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,092 pcs On Request	2092 pcs	On Request	1	On Request	On Request	18+	On Request	On Request

HGTP3N60A4 Description

Short technical summary and product information.

The HGTP3N60A4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, designed for high-voltage switching applications. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. This device is rated for a collector-emitter voltage of 600V and a continuous collector current of 17A at 25°C, with a pulsed current capability of 40A. The typical saturation voltage (Vce(on)) is 2.7V at 15V gate drive and 3A collector current.

This IGBT is optimized for high-frequency switch-mode power supplies (SMPS) and can operate at frequencies above 100kHz at 390V and 3A. It features a typical fall time of 70ns at 125°C and low switching energy (37µJ on, 25µJ off). The device includes a 600V switching SOA and 12mJ avalanche energy capability.

The HGTP3N60A4 is housed in a TO-220-3 (TO-220AB) through-hole package, suitable for easy mounting on heatsinks. The operating junction temperature range is -55°C to 150°C. The device is RoHS compliant (unverified) and has an MSL of 1 (unlimited). This part is a direct alternative to the surface-mount HGTD3N60A4S variant.

HGTP3N60A4 Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)

Canonical Name: HGTP3N60A4

Subcategory: Single

HGTP3N60A4 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

HGTP3N60A4 Estimated Pricing

Qty	Low	High
154+	$1.95	$1.95

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTP3N60A4 Features

600V collector-emitter voltage rating.
17A continuous collector current at 25°C.
Low Vce(on) of 2.7V typical.
Fast 70ns fall time at 125°C.
TO-220-3 through-hole package.

HGTP3N60A4 Applications

High-frequency switch-mode power supplies (SMPS).
High-voltage switching applications up to 600V.
Applications requiring low conduction losses.

HGTP3N60A4 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the HGTP3N60A4?

600V.

What is the continuous collector current rating?

17A at TC=25°C, 8A at TC=110°C.

What is the package type of the HGTP3N60A4?

TO-220-3 (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the HGTP3N60A4 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the typical Vce(on) value?

2.7V at 15V gate drive and 3A collector current.

What is the switching energy?

37µJ (on) and 25µJ (off) at 390V, 3A, 50 ohm gate resistance.

Category	Transistors - IGBTs - Single
Manufacturer Name	On Semiconductor
Current	17 A
Gate Charge	21 nC
Input Type	Standard
Mounting Type	Through Hole
Number of Pins	3
Operating Temperature	-55°C ~ 150°C (TJ)
Power	70 W
Supplier Device Package	TO-220-3
Switching Energy	37µJ (on), 25µJ (off)
Td (on	6 ns
Test Condition	390V, 3A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 3A
Voltage	600 V