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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,850 pcs
|
2850 pcs | On Request | 1 | On Request | On Request | 07+08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ TC = 110 °C) | |
| Collector Current (Pulsed) | |
| Current | |
| Fall Time (Typical @ TJ=150°C) | |
| Gate Charge | |
| Gate-Emitter Voltage (Continuous) | |
| Gate-Emitter Voltage (Pulsed) | |
| IGBT Type | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTP2N120CN is a Non-Punch Through (NPT) N-channel IGBT from ON Semiconductor (originally Fairchild Semiconductor). It is designed for high-voltage switching applications where low conduction loss is essential, combining the high input impedance of a MOSFET with the low on-state voltage of a bipolar transistor.
The device is rated for a maximum collector-emitter voltage of 1200V and a continuous collector current of 13A at TC=25°C (7A at TC=110°C), with a pulsed current rating of 20A. Maximum power dissipation is 104W. Typical gate charge is 30nC, and collector-emitter saturation voltage is 2.4V at VGE=15V and IC=2.6A. Switching times include a typical fall time of 360ns at TJ=150°C; typical switching energies are 96µJ (turn-on) and 355µJ (turn-off) under the same conditions.
This IGBT is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors. The NPT structure provides ruggedness and avalanche capability. The part is available in the TO-220-3 (TO-220AB) through-hole package. Alternate package variants include the TO-262 HGT1S2N120CN and TO-263AB HGT1S2N120CNS9A.
| Qty | Low | High |
|---|---|---|
| 400+ | $1.54 | $1.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage rating is 1200V.
13A at TC=25°C, 7A at TC=110°C, and 20A pulsed.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C (junction temperature).
The database lists it as RoHS3 compliant, but this status is unverified.
Typical turn-on energy is 96µJ and turn-off is 355µJ at VCE=960V, IC=2.6A, RG=51Ω, VGE=15V.
The typical gate charge is 30nC.