HGTP2N120CN The HGTP2N120CN is a 1200V, 13A NPT N-Channel IGBT in a TO-220-3 package. It offers 104W maximum power dissipation and is suited for high-voltage switching.
Mfr Part #:

HGTP2N120CN

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTP2N120CN is a 1200V, 13A NPT N-Channel IGBT in a TO-220-3 package. It offers 104W maximum power dissipation and is suited for high-voltage switching.
Total Stock: 7,850 pcs
$ Price Range: $1.54

HGTP2N120CN Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,850 pcs
2850 pcs On Request 1 On Request On Request 07+08+ On Request On Request

HGTP2N120CN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Maximum @ TC = 110 °C)
Collector Current (Pulsed)
Current
Fall Time (Typical @ TJ=150°C)
Gate Charge
Gate-Emitter Voltage (Continuous)
Gate-Emitter Voltage (Pulsed)
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

HGTP2N120CN Description

Short technical summary and product information.

The HGTP2N120CN is a Non-Punch Through (NPT) N-channel IGBT from ON Semiconductor (originally Fairchild Semiconductor). It is designed for high-voltage switching applications where low conduction loss is essential, combining the high input impedance of a MOSFET with the low on-state voltage of a bipolar transistor.

 

The device is rated for a maximum collector-emitter voltage of 1200V and a continuous collector current of 13A at TC=25°C (7A at TC=110°C), with a pulsed current rating of 20A. Maximum power dissipation is 104W. Typical gate charge is 30nC, and collector-emitter saturation voltage is 2.4V at VGE=15V and IC=2.6A. Switching times include a typical fall time of 360ns at TJ=150°C; typical switching energies are 96µJ (turn-on) and 355µJ (turn-off) under the same conditions.

 

This IGBT is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors. The NPT structure provides ruggedness and avalanche capability. The part is available in the TO-220-3 (TO-220AB) through-hole package. Alternate package variants include the TO-262 HGT1S2N120CN and TO-263AB HGT1S2N120CNS9A.

HGTP2N120CN Quick Information

Product Type: IGBT (Single)
Series: NPT
Canonical Name: NPT N-Channel IGBT, 1200V, 13A, TO-220-3
Subcategory: Single IGBT

HGTP2N120CN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HGTP2N120CN Estimated Pricing

Qty Low High
400+ $1.54 $1.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTP2N120CN Features

  • Rated for 1200V collector-emitter voltage.
  • Handles 13A continuous collector current.
  • NPT N-channel IGBT in TO-220-3 package.
  • Maximum power dissipation of 104W.
  • Typical fall time of 360ns at 150°C.

HGTP2N120CN Applications

  • Used in AC and DC motor controls.
  • Suitable for high voltage power supplies.
  • Drives solenoids, relays, and contactors.
  • Good for moderate frequency switching.

HGTP2N120CN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the HGTP2N120CN?

The maximum collector-emitter voltage rating is 1200V.

What is the continuous collector current rating?

13A at TC=25°C, 7A at TC=110°C, and 20A pulsed.

What is the package type?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the HGTP2N120CN RoHS compliant?

The database lists it as RoHS3 compliant, but this status is unverified.

What are the switching energy losses?

Typical turn-on energy is 96µJ and turn-off is 355µJ at VCE=960V, IC=2.6A, RG=51Ω, VGE=15V.

What is the typical gate charge?

The typical gate charge is 30nC.

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