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HGTP12N60C3D HGTP12N60C3D is a 600V, 24A N-channel IGBT from ON Semiconductor, housed in a TO-220-3 package. It offers 104W power dissipation and switching energies of 380µJ (on) and 900µJ (off).
Mfr Part #:

HGTP12N60C3D

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGTP12N60C3D is a 600V, 24A N-channel IGBT from ON Semiconductor, housed in a TO-220-3 package. It offers 104W power dissipation and switching energies of 380µJ (on) and 900µJ (off).
✓ Total Stock: 9,545 pcs
$ Price Range: $1.42

HGTP12N60C3D Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
8,745 pcs
On Request
8745 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
800 pcs
On Request
800 pcs On Request 1 On Request On Request On Request On Request On Request
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HGTP12N60C3D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage
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HGTP12N60C3D Description

Short technical summary and product information.

The HGTP12N60C3D is an N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency switching applications with a collector-emitter voltage rating of 600V and continuous collector current of 24A. The device features a low collector-emitter saturation voltage of 2.2V maximum at Vge=15V and Ic=15A, and a typical gate charge of 48 nC, ensuring efficient drive. The switching characteristics include typical turn-on energy of 380 µJ and turn-off energy of 900 µJ, with a reverse recovery time of 40 ns. The IGBT is housed in a through-hole TO-220-3 package, suitable for various power conversion topologies. It operates over a junction temperature range of -40°C to 150°C and has a power dissipation of 104W. The input type is standard N-channel, making it compatible with typical gate drive circuits.

HGTP12N60C3D Quick Information

Product Type: IGBT - Single
Series: UFS
Canonical Name: HGTP12N60C3D IGBT 600V 24A TO-220-3
Subcategory: N-Channel IGBT

HGTP12N60C3D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

HGTP12N60C3D Estimated Pricing

Qty Low High
800+ $1.42 $1.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTP12N60C3D Features

  • 600V collector-emitter voltage rating.
  • 24A continuous collector current.
  • Low Vce(on) of 2.2V max at 15A.
  • Fast switching with 40ns reverse recovery.
  • Through-hole TO-220-3 package.

HGTP12N60C3D Applications

  • Used in motor drive inverters.
  • Ideal for power supply converters.
  • Suitable for UPS systems.
  • Applied in induction heating.

HGTP12N60C3D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the HGTP12N60C3D?

600V.

What is the continuous collector current rating?

24A.

What is the power dissipation?

104W.

What is the package type?

TO-220-3 through-hole.

What is the operating temperature range?

-40°C to 150°C (junction).

What is the gate charge?

48 nC.

Is the HGTP12N60C3D RoHS compliant?

RoHS3 Compliant (unverified).

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