| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce(on) (Max) @ Vge, Ic | |
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The HGTP12N60A4D from On Semiconductor is a MOS gated, high voltage switching device that combines the best features of MOSFETs and bipolar transistors. It has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
This N-Channel IGBT is rated for a collector-emitter voltage of 600V and a continuous collector current of 54A at 25°C (23A at 110°C), with a pulsed current capability of 96A. It features a low on-state voltage of 2.7V and a typical gate charge of 78 nC. The device integrates an anti-parallel hyperfast diode with a 30 ns reverse recovery time.
This IGBT is optimized for high-frequency switch mode power supplies, with typical switching energies of 55 µJ (on) and 50 µJ (off). It is capable of operation above 100 kHz. The device is packaged in a standard Through Hole TO-220-3 package and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 152+ | $1.98 | $1.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
54 A at TC=25°C, 23 A at TC=110°C.
167 W at TC=25°C.
-55°C to 150°C.
Through Hole TO-220-3.
RoHS3 Compliant (Pb-Free per datasheet).