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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-23 21:33:16 |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG5N120BND is an NPT (Non-Punch Through) IGBT from ON Semiconductor designed for high-voltage switching applications. It features a collector-emitter voltage rating of 1200V and a continuous collector current rating of 21A, making it suitable for power conversion and motor control circuits.
This device offers a maximum collector-emitter saturation voltage of 2.7V at Vge=15V and Ic=5A, with a gate charge of 53 nC. Switching performance includes a turn-on delay time of 22 ns and a turn-off delay time of 160 ns, with switching energies of 450 µJ (on) and 390 µJ (off) under test conditions of 960V, 5A, and 25 Ohm gate resistance.
The HGTG5N120BND is packaged in a TO247-3 through-hole package, which provides good thermal dissipation and mechanical robustness for industrial applications. It operates over a junction temperature range of -55°C to 150°C.
The collector-emitter voltage rating is 1200V.
The maximum collector current is 21A.
It is available in a TO247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The gate charge is 53 nC.
The turn-on delay time is 22 ns under test conditions of 960V, 5A, and 25 Ohm gate resistance.
The turn-off delay time is 160 ns under test conditions of 960V, 5A, and 25 Ohm gate resistance.