HGTG5N120BND HGTG5N120BND is an NPT IGBT from ON Semiconductor with a 1200V collector-emitter voltage rating and 21A collector current capability. It is housed in a TO247-3 through-hole package.
Mfr Part #:

HGTG5N120BND

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGTG5N120BND is an NPT IGBT from ON Semiconductor with a 1200V collector-emitter voltage rating and 21A collector current capability. It is housed in a TO247-3 through-hole package.
Total Stock: 2,000 pcs

HGTG5N120BND Available from 1 distributor

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2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request 2026-02-23 21:33:16

HGTG5N120BND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

HGTG5N120BND Description

Short technical summary and product information.

The HGTG5N120BND is an NPT (Non-Punch Through) IGBT from ON Semiconductor designed for high-voltage switching applications. It features a collector-emitter voltage rating of 1200V and a continuous collector current rating of 21A, making it suitable for power conversion and motor control circuits.

 

This device offers a maximum collector-emitter saturation voltage of 2.7V at Vge=15V and Ic=5A, with a gate charge of 53 nC. Switching performance includes a turn-on delay time of 22 ns and a turn-off delay time of 160 ns, with switching energies of 450 µJ (on) and 390 µJ (off) under test conditions of 960V, 5A, and 25 Ohm gate resistance.

 

The HGTG5N120BND is packaged in a TO247-3 through-hole package, which provides good thermal dissipation and mechanical robustness for industrial applications. It operates over a junction temperature range of -55°C to 150°C.

HGTG5N120BND Quick Information

Product Type: IGBT
Canonical Name: HGTG5N120BND NPT IGBT 1200V 21A TO247-3
Subcategory: NPT IGBT

HGTG5N120BND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HGTG5N120BND Features

  • NPT IGBT rated at 1200V and 21A.
  • Maximum saturation voltage of 2.7V.
  • Gate charge of 53 nC typical.
  • TO247-3 through-hole package for easy mounting.
  • Wide operating temperature range -55°C to 150°C.

HGTG5N120BND Applications

  • Used in motor drive inverter circuits.
  • Suitable for power supply switching stages.
  • Ideal for induction heating power converters.
  • Applied in uninterruptible power supply (UPS) systems.

HGTG5N120BND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the HGTG5N120BND?

The collector-emitter voltage rating is 1200V.

What is the maximum collector current of the HGTG5N120BND?

The maximum collector current is 21A.

What package type is the HGTG5N120BND available in?

It is available in a TO247-3 through-hole package.

What is the operating temperature range of the HGTG5N120BND?

The operating junction temperature range is -55°C to 150°C.

What is the gate charge of the HGTG5N120BND?

The gate charge is 53 nC.

What is the turn-on delay time of the HGTG5N120BND?

The turn-on delay time is 22 ns under test conditions of 960V, 5A, and 25 Ohm gate resistance.

What is the turn-off delay time of the HGTG5N120BND?

The turn-off delay time is 160 ns under test conditions of 960V, 5A, and 25 Ohm gate resistance.

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