| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HGTG40N60B3 is a 600V, 70A Ultra-Fast Switching (UFS) N-Channel IGBT designed and manufactured by Harris Semiconductor. This device is optimized for high-efficiency power switching applications requiring fast switching speeds and low conduction losses.
Key electrical specifications include a collector-emitter saturation voltage of 2V maximum at Vge=15V and Ic=40A, a total gate charge of 250 nC, and a power dissipation rating of 290W. The switching performance is characterized with typical turn-on energy of 1.05mJ and turn-off energy of 800µJ under test conditions of 480V, 40A, 3Ω gate resistance, and 15V gate drive. Typical turn-on delay time is 47ns and turn-off delay time is 170ns.
The device is supplied in a standard TO-247-3 through-hole package with a junction operating temperature range of -55°C to 150°C. It is designed for use in motor drives, power supplies, and other industrial power conversion systems.
The maximum collector-emitter voltage (Vce) is 600V.
The maximum continuous collector current (Ic) is 70A.
It is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The typical gate charge (Qg) is 250 nC.