| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG40N60A4 is a MOS-gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor, offering high input impedance and low on-state conduction loss. It is rated for 600V collector-to-emitter voltage and 75A continuous collector current at 25°C, with a pulsed current capability of 300A. The device operates over a junction temperature range of -55°C to 150°C and dissipates up to 625W at 25°C case temperature.
Optimized for high-frequency switch mode power supplies, the HGTG40N60A4 supports 100 kHz operation at 390V/40A and 200 kHz at 390V/20A. Key electrical characteristics include a typical gate charge of 350 nC, turn-on delay of 25 ns, turn-off delay of 145 ns, and switching energies of 400 µJ (on) and 370 µJ (off). The device is Pb-Free and housed in a through-hole TO-247-3 package, suitable for power electronics designs requiring efficient high-voltage switching.
| Qty | Low | High |
|---|---|---|
| 450+ | $6.11 | $6.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter voltage rating is 600 V.
The continuous collector current is 75 A at TC = 25°C and 63 A at TC = 110°C.
It is available in a TO-247-3 through-hole package.
The operating and storage junction temperature range is -55°C to 150°C.
RoHS3 compliance is indicated but unverified; the device is Pb-Free as stated in the datasheet.
The gate charge is 350 nC.