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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,524 pcs
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2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Diode Forward Current | |
| Continuous Collector Current (Nominal @ Tc = 110 °C) | |
| Current | |
| Fall Time | |
| Gate Charge | |
| Gate-Emitter Voltage (Maximum @ Continuous) | |
| Gate-Emitter Voltage (Maximum @ Pulsed) | |
| Input Type | |
| Lead Style | |
| Maximum Lead Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation Derating | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time (Minimum @ Vge = 10 V) | |
| Short Circuit Withstand Time (Minimum @ Vge = 12 V) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Safe Operating Area | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG30N60B3D is a MOS-gated high voltage switching device that combines the best features of MOSFETs and bipolar transistors. It offers the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The on-state voltage drop is typically 1.9V at 15V gate drive and 30A collector current, and varies only moderately over temperature.
Key electrical specifications include a collector-emitter breakdown voltage of 600V, continuous collector current of 60A at 25°C (30A at 110°C), and a pulsed current rating of 220A. The device dissipates up to 208W at 25°C case temperature. Switching performance is characterized by a typical fall time of 90ns at 150°C junction temperature and a short circuit withstand time of 4µs at Vge=12V. The integrated hyperfast anti-parallel diode has a reverse recovery time of 55ns.
The HGTG30N60B3D is housed in a TO-247-3 package with through-hole mounting. It is Pb-Free and RoHS3 compliant. The operating junction temperature range is -55°C to 150°C. This IGBT is ideal for applications such as AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors where low conduction losses at moderate frequencies are essential.
600V minimum.
60A at Tc=25°C, 30A at Tc=110°C.
TO-247-3.
-55°C to 150°C (TJ).
Yes, RoHS3 compliant and Pb-Free (verified from datasheet).
90 ns at TJ=150°C.
55 ns typical.