HGTG30N60B3D The HGTG30N60B3D is a 600V, 60A N-Channel IGBT with an anti-parallel hyperfast diode, designed for high voltage switching applications. It features a TO-247-3 package and 208W power dissipation.
Mfr Part #:

HGTG30N60B3D

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTG30N60B3D is a 600V, 60A N-Channel IGBT with an anti-parallel hyperfast diode, designed for high voltage switching applications. It features a TO-247-3 package and 208W power dissipation.
Total Stock: 2,524 pcs

HGTG30N60B3D Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,524 pcs
2524 pcs On Request 1 On Request On Request On Request On Request On Request

HGTG30N60B3D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Average Diode Forward Current
Continuous Collector Current (Nominal @ Tc = 110 °C)
Current
Fall Time
Gate Charge
Gate-Emitter Voltage (Maximum @ Continuous)
Gate-Emitter Voltage (Maximum @ Pulsed)
Input Type
Lead Style
Maximum Lead Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation Derating
Pulsed Collector Current
Reverse Recovery Time (trr)
Short Circuit Withstand Time (Minimum @ Vge = 10 V)
Short Circuit Withstand Time (Minimum @ Vge = 12 V)
Storage Temperature
Supplier Device Package
Switching Energy
Switching Safe Operating Area
Td (on
Test Condition
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

HGTG30N60B3D Description

Short technical summary and product information.

The HGTG30N60B3D is a MOS-gated high voltage switching device that combines the best features of MOSFETs and bipolar transistors. It offers the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The on-state voltage drop is typically 1.9V at 15V gate drive and 30A collector current, and varies only moderately over temperature.

 

Key electrical specifications include a collector-emitter breakdown voltage of 600V, continuous collector current of 60A at 25°C (30A at 110°C), and a pulsed current rating of 220A. The device dissipates up to 208W at 25°C case temperature. Switching performance is characterized by a typical fall time of 90ns at 150°C junction temperature and a short circuit withstand time of 4µs at Vge=12V. The integrated hyperfast anti-parallel diode has a reverse recovery time of 55ns.

 

The HGTG30N60B3D is housed in a TO-247-3 package with through-hole mounting. It is Pb-Free and RoHS3 compliant. The operating junction temperature range is -55°C to 150°C. This IGBT is ideal for applications such as AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors where low conduction losses at moderate frequencies are essential.

HGTG30N60B3D Quick Information

Product Type: N-Channel IGBT
Series: UFS
Canonical Name: HGTG30N60B3D N-Channel IGBT with Anti-Parallel Hyperfast Diode
Subcategory: Single IGBTs

HGTG30N60B3D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HGTG30N60B3D Features

  • 600V collector-emitter breakdown voltage.
  • 60A continuous collector current at 25°C.
  • Low on-state voltage of 1.9V max.
  • Hyperfast anti-parallel diode included.
  • TO-247-3 through-hole package.

HGTG30N60B3D Applications

  • Ideal for AC and DC motor controls.
  • Used in power supply circuits.
  • Drives solenoids, relays, and contactors.
  • Suitable for high voltage switching applications.

HGTG30N60B3D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

600V minimum.

What is the continuous collector current rating?

60A at Tc=25°C, 30A at Tc=110°C.

What is the package type?

TO-247-3.

What is the operating temperature range?

-55°C to 150°C (TJ).

Is this device RoHS compliant?

Yes, RoHS3 compliant and Pb-Free (verified from datasheet).

What is the typical fall time?

90 ns at TJ=150°C.

What is the reverse recovery time of the diode?

55 ns typical.

Home
Account

Categories