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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57 pcs
|
57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulsed) | |
| Current | |
| Gate Charge | |
| Gate to Emitter Threshold Voltage | |
| Gate-to-Emitter Voltage (Continuous) | |
| Gate-to-Emitter Voltage (Pulsed) | |
| Halogen Free | |
| Ic (@ TC = 110 °C) | |
| Input Type | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Packing Method | |
| Power | |
| Power Dissipation Derating | |
| Reverse Voltage Avalanche Energy | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Tsc (@ VGE = 10 V) | |
| Tsc (@ VGE = 12 V) | |
| Turn-Off Delay Time | |
| Typical Fall Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(sat) (Typical/Maximum @ IC = 30 A, VGE = 15 V, TC = 150 °C) | |
| Vce(sat) (Typical/Maximum @ IC = 30 A, VGE = 15 V, TC = 25 °C) | |
| Voltage |
The HGTG30N60B3 is an NPT IGBT from onsemi that combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. It is rated for a collector-to-emitter voltage of 600V and a continuous collector current of 60A at TC = 25°C, or 30A at TC = 110°C. The device can handle pulsed collector currents up to 220A and dissipates up to 208W at TC = 25°C.
Key electrical characteristics include a typical collector-to-emitter saturation voltage of 1.45V at IC = 30A and VGE = 15V, and a typical fall time of 90ns at TJ = 150°C. The gate-to-emitter voltage is rated at ±20V continuous and ±30V pulsed. The device also features a short circuit withstand time of 4µs at VGE = 12V and 10µs at VGE = 10V.
The HGTG30N60B3 is housed in a TO-247-3 package with through-hole mounting, suitable for high-power applications. It is Pb-free and RoHS compliant. The device is ideal for high-voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverters, and power supplies.
| Qty | Low | High |
|---|---|---|
| 84+ | $3.59 | $3.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage is 600V.
The continuous collector current is 60A at TC = 25°C.
The operating junction temperature range is -55°C to +150°C.
The HGTG30N60B3 is RoHS3 compliant and Pb-free.
The HGTG30N60B3 is available in a TO-247-3 package with through-hole mounting.