| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HGTG30N60B3 is an N-channel, non-punch-through (NPT) IGBT from Harris Semiconductor. It is rated for a collector-emitter voltage of 600V and a collector current of 60A, with a maximum power dissipation of 208W. The device has a gate charge of 170nC and a saturation voltage of 1.9V at Vge=15V and Ic=30A.
This IGBT is designed for high-power switching applications. Its switching characteristics include turn-on and turn-off delay times of 36ns and 137ns respectively, and switching energies of 500µJ (on) and 680µJ (off) when tested at 480V, 30A, 3Ω, and 15V. The device operates over a junction temperature range of -55°C to 150°C.
The HGTG30N60B3 is housed in a TO-247-3 package with through-hole mounting, suitable for power circuit boards requiring robust thermal and electrical performance. The standard input type is compatible with typical IGBT gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 84+ | $3.59 | $3.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HGTG30N60B3 has a collector-emitter voltage rating of 600V.
The HGTG30N60B3 can handle a collector current of 60A.
The HGTG30N60B3 has a maximum power dissipation of 208W.
The HGTG30N60B3 operates over a junction temperature range of -55°C to 150°C.
The HGTG30N60B3 is available in a TO-247-3 through-hole package.
The HGTG30N60B3 has a gate charge of 170nC.
The HGTG30N60B3 has a saturation voltage of 1.9V at Vge=15V and Ic=30A.