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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16,290 pcs
|
16290 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
846 pcs
|
846 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulsed) | |
| Collector-to-Emitter Breakdown Voltage | |
| Current | |
| Gate Charge | |
| Gate-Emitter Threshold Voltage | |
| Gate-Emitter Voltage (Continuous) | |
| Gate-Emitter Voltage (Pulsed) | |
| IC (Nominal @ TC = 25 °C) | |
| Ic (Nominal @ Tc=110 °C) | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(sat) (Minimum/Typical/Maximum @ Ic=30 A, Vge=15 V, Tj=125 °C) | |
| Vce(sat) (Minimum/Typical/Maximum @ Ic=30 A, Vge=15 V, Tj=25 °C) | |
| Voltage |
The HGTG30N60A4D from onsemi is a 600V N-Channel IGBT with an anti-parallel hyperfast diode. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device is part of the SMPS series, optimized for high-frequency switch mode power supplies.
The device has a collector-to-emitter breakdown voltage of 600V. It can handle a continuous collector current of 70A at a case temperature of 25°C and 60A at 110°C. Pulsed collector current is rated up to 240A. Power dissipation at 25°C is 463W. The gate-emitter voltage can be ±20V continuous and ±30V pulsed. The collector-emitter saturation voltage is typically 1.8V at 25°C and 1.6V at 125°C with a gate voltage of 15V and collector current of 30A.
This IGBT is designed for high voltage switching applications operating at high frequencies where low conduction losses are essential. It supports operation above 100kHz at 390V and 30A, and up to 200kHz at 390V and 18A. The device features a typical fall time of 60ns at 125°C and has a 600V switching SOA capability. It is suitable for switch mode power supplies, inverters, and other power conversion circuits.
The HGTG30N60A4D is available in a TO-247-3 package with through-hole mounting. The operating junction temperature range is -55°C to 150°C. The device is Pb-Free compliant.
| Qty | Low | High |
|---|---|---|
| 70+ | $9.10 | $9.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter breakdown voltage is 600V.
The continuous collector current is 70A at TC=25°C and 60A at TC=110°C.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-247-3 package with through-hole mounting.
The database lists it as RoHS3 compliant, and the datasheet confirms the device is Pb-Free.
The continuous gate-emitter voltage is ±20V, and pulsed is ±30V.
The power dissipation is 463W at TC=25°C.