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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,565 pcs
|
1565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
87 pcs
|
87 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Fall Time | |
| Gate Charge | |
| Gate-to-Emitter Voltage (Continuous) | |
| IC (Nominal @ TC = 25 °C) | |
| Ic (Nominal @ Tc=110 °C) | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG30N60A4 is an IGBT from On Semiconductor designed for high-voltage, high-frequency switching applications. It combines high input impedance and low on-state conduction loss, ideal for SMPS, UPS, and welders.
Key electrical specifications include a 600 V collector-to-emitter breakdown voltage, 75 A continuous collector current at TC=25°C (60 A at 110°C), and a maximum power dissipation of 463 W. The device supports a gate-emitter voltage of ±20 V and has a maximum VCE(sat) of 2.6 V at 15 V gate-emitter and 30 A collector current. Typical switching energy is 280 µJ on and 240 µJ off, with a fall time of 58 ns at TJ=125°C.
The HGTG30N60A4 is supplied in a Pb-Free TO-247-3 through-hole package and operates over a junction temperature range of -55°C to +150°C. Its low conduction loss and fast switching characteristics make it well suited for power conversion circuits where efficiency and thermal performance are critical.
600 V.
75 A at TC=25°C, and 60 A at TC=110°C.
463 W at TC=25°C.
-55°C to +150°C.
TO-247-3, through-hole mounting.
Available data lists it as RoHS3 compliant (unverified), and the datasheet confirms it is a Pb-Free device.
58 ns at TJ=125°C.