HGTG30N60A4 HGTG30N60A4 is a 600V, 75A IGBT from On Semiconductor in a TO-247-3 package. It offers low saturation voltage and fast switching for high-frequency power applications.
Mfr Part #:

HGTG30N60A4

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGTG30N60A4 is a 600V, 75A IGBT from On Semiconductor in a TO-247-3 package. It offers low saturation voltage and fast switching for high-frequency power applications.
Total Stock: 5,652 pcs

HGTG30N60A4 Available from 3 distributors

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HGTG30N60A4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Fall Time
Gate Charge
Gate-to-Emitter Voltage (Continuous)
IC (Nominal @ TC = 25 °C)
Ic (Nominal @ Tc=110 °C)
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

HGTG30N60A4 Description

Short technical summary and product information.

The HGTG30N60A4 is an IGBT from On Semiconductor designed for high-voltage, high-frequency switching applications. It combines high input impedance and low on-state conduction loss, ideal for SMPS, UPS, and welders.

 

Key electrical specifications include a 600 V collector-to-emitter breakdown voltage, 75 A continuous collector current at TC=25°C (60 A at 110°C), and a maximum power dissipation of 463 W. The device supports a gate-emitter voltage of ±20 V and has a maximum VCE(sat) of 2.6 V at 15 V gate-emitter and 30 A collector current. Typical switching energy is 280 µJ on and 240 µJ off, with a fall time of 58 ns at TJ=125°C.

 

The HGTG30N60A4 is supplied in a Pb-Free TO-247-3 through-hole package and operates over a junction temperature range of -55°C to +150°C. Its low conduction loss and fast switching characteristics make it well suited for power conversion circuits where efficiency and thermal performance are critical.

HGTG30N60A4 Quick Information

Product Type: IGBT Transistor
Canonical Name: HGTG30N60A4 600V 75A Single IGBT in TO-247-3
Subcategory: Single IGBT

HGTG30N60A4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HGTG30N60A4 Features

  • Rated for 600V collector-emitter voltage.
  • Handles 75A continuous collector current.
  • Low saturation voltage for efficient switching.
  • Fast 58ns typical fall time.
  • Supplied in Pb-Free TO-247-3 package.

HGTG30N60A4 Applications

  • Used in uninterruptible power supplies.
  • Suitable for welding equipment power stages.
  • Ideal for switch-mode power supplies.

HGTG30N60A4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-to-emitter breakdown voltage of the HGTG30N60A4?

600 V.

What continuous collector current can the HGTG30N60A4 handle?

75 A at TC=25°C, and 60 A at TC=110°C.

What is the maximum power dissipation of the HGTG30N60A4?

463 W at TC=25°C.

What is the operating junction temperature range?

-55°C to +150°C.

What package is the HGTG30N60A4 available in?

TO-247-3, through-hole mounting.

Is the HGTG30N60A4 RoHS compliant and Pb-Free?

Available data lists it as RoHS3 compliant (unverified), and the datasheet confirms it is a Pb-Free device.

What is the typical fall time of the HGTG30N60A4?

58 ns at TJ=125°C.

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