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HGTG27N120BN The HGTG27N120BN is a 1200V, 72A NPT IGBT from ON Semiconductor in a TO-247-3 package. It features low conduction loss and is suitable for high voltage switching applications.
Mfr Part #:

HGTG27N120BN

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTG27N120BN is a 1200V, 72A NPT IGBT from ON Semiconductor in a TO-247-3 package. It features low conduction loss and is suitable for high voltage switching applications.
Total Stock: 4,700 pcs

HGTG27N120BN Available from 1 distributor

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HGTG27N120BN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Maximum @ TC = 110 °C)
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current (Maximum @ VCE = 1200 V, TC = 25 °C)
Current
Emitter-Collector Breakdown Voltage
Gate Charge
Gate-Emitter Voltage (Maximum)
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
collector_current (Maximum)

HGTG27N120BN Description

Short technical summary and product information.

The HGTG27N120BN is a Non-Punch Through (NPT) IGBT designed for high voltage switching applications. It offers a maximum collector-emitter voltage of 1200V and a continuous collector current of 72A at 25°C (34A at 110°C). The device features a low saturation voltage of 2.7V typical at 15V gate drive and 27A collector current, contributing to reduced conduction losses.

 

Switching performance is characterized by typical turn-on delay of 24 ns and turn-off delay of 195 ns, with switching energies of 2.2 mJ (on) and 2.3 mJ (off) at 960V and 27A. The gate charge is 270 nC typical. The IGBT is rated for a maximum power dissipation of 500W and can operate over a junction temperature range of -55°C to 150°C.

 

The device is housed in a TO-247-3 through-hole package, suitable for easy mounting on heatsinks. It is Pb-Free and designed for applications such as motor controls, power supplies, and solenoid drivers.

HGTG27N120BN Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Series: NPT Series
Canonical Name: HGTG27N120BN - NPT IGBT, 1200V, 72A, TO-247-3
Subcategory: Single IGBT

HGTG27N120BN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

HGTG27N120BN Features

  • 1200V collector-emitter breakdown voltage.
  • 72A continuous collector current at 25°C.
  • NPT IGBT technology for low conduction loss.
  • TO-247-3 through-hole package.
  • Pb-Free device.

HGTG27N120BN Applications

  • AC and DC motor control circuits.
  • Power supply and inverter systems.
  • Solenoid and relay driver modules.
  • High voltage switching applications.

HGTG27N120BN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the HGTG27N120BN?

The package is TO-247-3.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is 1200V.

What is the maximum continuous collector current at 25°C?

The maximum continuous collector current is 72A at 25°C.

What is the typical gate charge?

The typical gate charge is 270 nC.

What is the typical saturation voltage (Vce(on))?

The typical saturation voltage is 2.7V at Vge=15V and Ic=27A.

What is the typical switching energy?

The typical switching energy is 2.2 mJ on and 2.3 mJ off at 960V, 27A, 3 Ohm, 15V.

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