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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulsed) | |
| Collector-Emitter Voltage | |
| Current | |
| Fall Time (Typical @ 150°C) | |
| Gate Charge | |
| Gate-Emitter Voltage (Continuous) | |
| Gate-Emitter Voltage (Pulsed) | |
| Ic Continuous (Nominal @ Tc=110 °C) | |
| Ic Continuous (Nominal @ Tc=25 °C) | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Turn-Off) | |
| T Sc (Nominal @ Vge=10 V, Vce=360 V, Tc=125 °C, Rg=25Ω) | |
| T Sc (Nominal @ Vge=15 V, Vce=360 V, Tc=125 °C, Rg=25Ω) | |
| Vce Sat (Typical/Maximum @ Vge=15 V, Ic=20 A, Tc=150 °C) | |
| Vce Sat (Typical/Maximum @ Vge=15 V, Ic=20 A, Tc=25 °C) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG20N60B3D is a MOS-gated high voltage switching device that combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. It is rated for 600V collector-emitter voltage and 40A continuous collector current at Tc=25°C (20A at Tc=110°C). The device includes an anti-parallel hyperfast diode (RHRP3060) for improved switching performance.
Key electrical characteristics include a typical collector-emitter saturation voltage of 1.8V at Vge=15V, Ic=20A, and a typical fall time of 140ns at 150°C. The IGBT is short circuit rated with a withstand time of 4µs at Vge=15V and 10µs at Vge=10V. Gate charge is 80nC, and switching energy is 475µJ (turn-on) and 1.05mJ (turn-off).
The device is housed in a TO-247-3 through-hole package and is Pb-Free. It is suitable for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
| Qty | Low | High |
|---|---|---|
| 450+ | $3.22 | $3.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
40A at Tc=25°C, 20A at Tc=110°C.
TO-247-3.
-40°C to 150°C.
RoHS3 compliant (unverified).
140ns at 150°C.
Yes, a hyperfast anti-parallel diode (RHRP3060).