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HGTG20N60B3 The HGTG20N60B3 is a 600V, 40A N-Channel IGBT from ON Semiconductor. It features a low saturation voltage and short circuit capability, housed in a TO-247-3 package.
Mfr Part #:

HGTG20N60B3

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTG20N60B3 is a 600V, 40A N-Channel IGBT from ON Semiconductor. It features a low saturation voltage and short circuit capability, housed in a TO-247-3 package.
Total Stock: 7,307 pcs
$ Price Range: $2.48

HGTG20N60B3 Available from 4 distributors

Authorised
Non-Authorised

HGTG20N60B3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Pulsed (ICM)
Current
Fall Time (tf) @ 150°C
Gate Charge
Ic (Maximum @ TC = 110 °C)
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Switching Energy (off) (Eoff)
Switching Safe Operating Area (SSOA) @ TC=150°C
Test Condition
Vce(on) (Max) @ Vge, Ic
Vge (Maximum @ Continuous)
Vge (Maximum @ Pulsed)
Voltage
tsc (Minimum @ VGE=10 V, VCE=360 V, TC=125 °C, RG=25Ω)
tsc (Minimum @ VGE=15 V, VCE=360 V, TC=125 °C, RG=25Ω)

HGTG20N60B3 Description

Short technical summary and product information.

The HGTG20N60B3 is an N-Channel IGBT from ON Semiconductor, part of the UFS Series. It is designed for high voltage switching applications requiring low conduction losses. The device combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor.

 

This IGBT has a maximum collector-emitter voltage of 600V and continuous collector current of 40A at 25°C (20A at 110°C). Pulsed collector current can reach 160A. Power dissipation is 165W at 25°C. The typical collector-emitter saturation voltage is 2V at 15V gate voltage and 20A collector current. Gate charge is 80 nC typical. Switching energies are 475 µJ (turn-on) and 1.05 mJ (turn-off) under test conditions of 480V, 20A. The device has a typical fall time of 140 ns at 150°C.

 

The HGTG20N60B3 is short circuit rated, with a withstand time of 4 µs at 15V gate voltage and 10 µs at 10V. It has a switching safe operating area of 30A at 600V at 150°C. The device is housed in a TO-247-3 through-hole package and operates over a junction temperature range of -40°C to 150°C. It is suitable for applications such as AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.

HGTG20N60B3 Quick Information

Product Type: IGBT
Canonical Name: HGTG20N60B3 N-Channel IGBT 600V 40A TO-247-3
Subcategory: Single

HGTG20N60B3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

HGTG20N60B3 Estimated Pricing

Qty Low High
450+ $2.48 $2.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTG20N60B3 Features

  • 600V collector-emitter voltage rating.
  • 40A continuous collector current at 25°C.
  • 165W power dissipation capability.
  • Low saturation voltage of 2V.
  • Short circuit rated for rugged operation.

HGTG20N60B3 Applications

  • Ideal for AC and DC motor control circuits.
  • Used in switch mode power supplies.
  • Drives solenoids, relays, and contactors.
  • Suitable for high voltage switching applications.

HGTG20N60B3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the HGTG20N60B3?

600 V.

What is the package type of the HGTG20N60B3?

TO-247-3 (through-hole).

What is the operating temperature range?

-40°C to 150°C (junction temperature).

Is the HGTG20N60B3 RoHS compliant?

The device is listed as RoHS3 compliant (unverified) and the datasheet indicates it is Pb-Free.

What is the continuous collector current rating?

40 A at 25°C case temperature, 20 A at 110°C.

What is the typical fall time?

140 ns at 150°C junction temperature.

What is the short circuit withstand time?

4 µs at VGE=15V and 10 µs at VGE=10V.

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