WBC2.5/A-4B1
NXP Semiconductors
The FERROXCUBE WBC2.5/A-4B1 is a ferrite bead designed for signal line filtering. It offers an impedance of >=700 Ohm at 180 MHz.
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52,350 pcs
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52350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HGTG20N60A4D from On Semiconductor is a MOS gated high voltage switching device combining MOSFET input impedance with bipolar transistor low conduction loss. This IGBT is optimized for high frequency switch mode power supplies and is suitable for applications operating at high frequencies where low conduction losses are essential.
Key electrical specifications include a 600V Collector to Emitter Voltage and a continuous Collector Current of 70A at 25°C, derating to 40A at 110°C. It also features a typical fall time of 55ns at 125°C junction temperature. The device is housed in a JEDEC TO-247 package, suitable for through-hole mounting.
This IGBT is ideal for many high voltage switching applications operating at high frequencies. The device has been optimized for high frequency switch mode power supplies, offering low conduction loss and temperature-compensating characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector to Emitter Voltage is 600V.
The continuous collector current at 25°C is 70A.
The typical fall time is 55ns at 125°C.
The HGTG20N60A4D is supplied in a TO-247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.