| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HGTG20N60A4 is an N-channel IGBT designed for high-performance switching applications. It is rated for a maximum collector-emitter voltage of 600V and a continuous collector current of 70A, with a power dissipation capability of 290W. The device offers a typical gate charge of 142 nC and a collector-emitter saturation voltage of 2.7V at 15V gate drive and 20A collector current. Switching characteristics are specified at 390V, 20A, and 3Ω gate resistance, with turn-on energy of 105 µJ and turn-off energy of 150 µJ. The IGBT is housed in a TO-247-3 through-hole package, suitable for robust mounting and thermal management. The junction temperature range is -55°C to 150°C, making it reliable for industrial and power electronics environments.
600V.
70A.
290W.
TO-247-3.
-55°C to 150°C.
142 nC.
Yes, RoHS3 compliant (unverified).