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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,400 pcs
|
4400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ TC = 110 °C) | |
| Collector Current Pulsed (ICM) | |
| Collector-Emitter Leakage Current (Maximum @ VCE = 1200 V, TC = 150 °C) | |
| Collector-Emitter Leakage Current (Maximum @ VCE = 1200 V, TC = 25 °C) | |
| Collector-Emitter Leakage Current (Typical @ VCE = 1200 V, TC = 125 °C) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ IC = 18 A, VGE = 15 V, TC = 150 °C) | |
| Current | |
| Fall Time (tf) | |
| Gate Charge | |
| Gate Threshold Voltage (Vge(th)) | |
| Gate-Emitter Voltage (Maximum @ Continuous) | |
| Gate-Emitter Voltage (Maximum @ Pulsed) | |
| IGBT Type | |
| Input Type | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Packing Method | |
| Power | |
| Power Dissipation Derating | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time (Minimum @ VGE = 12 V, VCE(PK) = 960 V, TJ = 125 °C, RG = 3 Ω) | |
| Short Circuit Withstand Time (Minimum @ VGE = 15 V, VCE(PK) = 960 V, TJ = 125 °C, RG = 3 Ω) | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Safe Operating Area (SSOA) | |
| Td (on | |
| Termination Style | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT designed for high voltage switching applications at moderate frequencies where low conduction losses are essential. It is rated for a maximum collector-emitter voltage of 1200V and a continuous collector current of 54A at 25°C, with a pulsed current capability of 160A.
Key electrical characteristics include a typical collector-emitter saturation voltage of 2.45V at 18A and a typical gate charge of 165nC. The device is specified with a short circuit withstand time of 8µs at VGE=15V and 15µs at VGE=12V. It is housed in a standard TO-247-3 through-hole package and is Pb-Free.
The maximum collector-emitter voltage (Vces) is 1200V.
The continuous collector current (Ic) is 54A at a case temperature of 25°C.
The HGTG18N120BND is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The HGTG18N120BND is listed as RoHS3 compliant, though this is based on distributor data and is unverified.
The typical gate charge (Qg) is 165 nC.
The maximum power dissipation is 390W at a case temperature of 25°C.