| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG12N60C3D is an N-channel IGBT from Harris Semiconductor, part of the UFS series. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 24A, with a maximum power dissipation of 104W. The device exhibits a typical collector-emitter saturation voltage of 2.2V at Vge=15V and Ic=15A. Switching performance is characterized by a turn-on energy of 380µJ and turn-off energy of 900µJ, with a gate charge of 48nC. The reverse recovery time is 42ns. The IGBT is designed for through-hole mounting in a TO-247-3 package and operates over a junction temperature range of -40°C to 150°C. Compliance with RoHS and REACH is unverified; the RoHS status is reported as RoHS3 Compliant with low confidence due to conflicting sources. No datasheet is currently linked for this part.
| Qty | Low | High |
|---|---|---|
| 58+ | $5.18 | $5.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vces) is 600V.
The continuous collector current (Ic) is 24A.
It is housed in a TO-247-3 through-hole package.
The junction operating temperature range is -40°C to 150°C.
The RoHS status is reported as RoHS3 Compliant, but this is unverified and has low confidence due to conflicting sources.
The gate charge (Qg) is 48nC.
Typical turn-on energy (Eon) is 380µJ and turn-off energy (Eoff) is 900µJ.