HGTG12N60A4D 600V 54A 167W N-channel IGBT in TO-247-3 package with anti-parallel hyperfast diode. Optimized for high frequency SMPS applications.
Mfr Part #:

HGTG12N60A4D

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
600V 54A 167W N-channel IGBT in TO-247-3 package with anti-parallel hyperfast diode. Optimized for high frequency SMPS applications.
Total Stock: 12,568 pcs

HGTG12N60A4D Available from 2 distributors

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HGTG12N60A4D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulsed)
Collector Current Continuous (Maximum @ TC=110 °C)
Current
Fall Time
Gate Charge
Gate-Emitter Voltage (Continuous)
Gate-Emitter Voltage (Pulsed)
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Switching Frequency (Typical @ 390 V, 12 A)
Switching Frequency (Typical @ 390 V, 9 A)
Td (on
Test Condition
Turn-Off Delay Time
Vce(on) (Max) @ Vge, Ic
Voltage

HGTG12N60A4D Description

Short technical summary and product information.

The HGTG12N60A4D is an N-channel IGBT from On Semiconductor combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. The device integrates an anti-parallel hyperfast diode. Rated for maximum collector-emitter voltage of 600V and continuous collector current of 54A at TC=25°C (23A at TC=110°C, 96A pulsed). The collector-emitter saturation voltage is typically 2.7V at VGE=15V, IC=12A. Turn-on and turn-off switching energies are typically 55µJ and 50µJ respectively under 390V, 12A, 10Ω, 15V conditions. The device is housed in a through-hole TO-247-3 package and operates over a junction temperature range of -55°C to 150°C. It is optimized for high-frequency switch-mode power supplies and supports >100kHz operation at 390V, 12A and 200kHz at 390V, 9A.

HGTG12N60A4D Quick Information

Product Type: IGBT
Series: SMPS Series
Canonical Name: HGTG12N60A4D N-Channel IGBT with Anti-Parallel Hyperfast Diode
Subcategory: N-Channel IGBT

HGTG12N60A4D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HGTG12N60A4D Features

  • 600V collector-emitter voltage rating.
  • 54A continuous collector current at 25°C.
  • 167W power dissipation capability.
  • Integrated anti-parallel hyperfast diode.
  • Optimized for >100kHz switching frequencies.

HGTG12N60A4D Applications

  • Ideal for high frequency switch mode power supplies.
  • Used in power factor correction circuits.
  • Suitable for induction heating applications.
  • Employed in uninterruptible power supplies.

HGTG12N60A4D FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the HGTG12N60A4D?

The maximum collector-emitter voltage is 600 V.

What is the continuous collector current rating?

At a case temperature of 25°C the maximum continuous collector current is 54 A. At TC=110°C it derates to 23 A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the HGTG12N60A4D use?

It is available in a TO-247-3 package with through-hole mounting.

Is the HGTG12N60A4D RoHS compliant?

The part is listed as RoHS3 Compliant, though this status is unverified. The datasheet states it is a Pb-Free device.

What is the typical gate charge?

The typical total gate charge is 78 nC.

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