HGTG11N120CND The HGTG11N120CND is a 1200V, 43A NPT N-Channel IGBT with an anti-parallel hyperfast diode. It is housed in a TO-247-3 through-hole package.
Mfr Part #:

HGTG11N120CND

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTG11N120CND is a 1200V, 43A NPT N-Channel IGBT with an anti-parallel hyperfast diode. It is housed in a TO-247-3 through-hole package.
Total Stock: 17,476 pcs
$ Price Range: $4.26

HGTG11N120CND Available from 4 distributors

Authorised
Non-Authorised

HGTG11N120CND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulsed)
Collector-to-Emitter Breakdown Voltage
Current
Gate Charge
Gate-to-Emitter Voltage (Continuous)
Gate-to-Emitter Voltage (Pulsed)
Halogen Free
IGBT Type
Ic (Nominal @ Tc=110 °C)
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Turn-Off Delay Time
Vce(on) (Max) @ Vge, Ic
Voltage

HGTG11N120CND Description

Short technical summary and product information.

The HGTG11N120CND is a Non-Punch Through (NPT) N-Channel IGBT from ON Semiconductor, featuring an integrated anti-parallel hyperfast diode. It is rated for a collector-to-emitter breakdown voltage of 1200 V and continuous collector current of 43 A at 25°C (22 A at 110°C). The device offers a low saturation voltage of 2.4 V at 15 V gate drive and 11 A collector current. Switching characteristics include typical turn-on delay of 23 ns and turn-off delay of 180 ns, with switching energies of 950 µJ (on) and 1.3 mJ (off) under test conditions of 960 V, 11 A, and 10 Ω gate resistance. The IGBT is designed for moderate frequency high voltage switching applications such as AC and DC motor controls, power supplies, and solenoid drivers. It is packaged in a TO-247-3 through-hole package, suitable for power dissipation up to 298 W at 25°C case temperature. The device is Pb-free and RoHS compliant.

HGTG11N120CND Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Series: NPT Series
Canonical Name: HGTG11N120CND NPT N-Channel IGBT with Anti-Parallel Hyperfast Diode
Subcategory: Single IGBT

HGTG11N120CND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HGTG11N120CND Estimated Pricing

Qty Low High
450+ $4.26 $4.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTG11N120CND Features

  • 1200V collector-to-emitter breakdown voltage.
  • 43A continuous collector current at 25°C.
  • Low saturation voltage of 2.4V.
  • NPT technology for rugged switching.
  • Integrated anti-parallel hyperfast diode.

HGTG11N120CND Applications

  • Used in AC and DC motor control circuits.
  • Ideal for high voltage power supplies.
  • Suitable for solenoid and relay drivers.
  • Applicable in uninterruptible power supplies.

HGTG11N120CND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-to-emitter breakdown voltage of the HGTG11N120CND?

1200 V minimum at Ic=250µA, Vge=0V.

What package does the HGTG11N120CND come in?

TO-247-3 through-hole package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the HGTG11N120CND RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What is the gate charge of the HGTG11N120CND?

100 nC typical.

What is the switching energy for turn-on and turn-off?

Turn-on: 950 µJ, turn-off: 1.3 mJ at 960V, 11A, 10Ω, 15V.

What is the maximum power dissipation?

298 W at case temperature 25°C.

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