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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,777 pcs
|
8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulsed) | |
| Collector-Emitter Leakage Current | |
| Current | |
| Fall Time | |
| Gate Charge | |
| Gate-Emitter Voltage (Continuous) | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Vce Saturation (Typical/Maximum @ VGE=15 V, IC=10 A, TC=150 °C) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG10N120BND from onsemi is a Non-Punch Through (NPT) N-Channel IGBT integrating an anti-parallel hyperfast diode. It is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at TC=25°C, with pulsed collector current capability up to 80 A. Maximum power dissipation is 298 W at TC=25°C, and gate-to-emitter voltage is rated at ±20 V continuous. The device features a typical gate charge of 100 nC and collector-emitter saturation voltage of 2.7 V maximum at VGE=15 V and IC=10 A.
Designed for moderate-frequency, high-voltage switching, the HGTG10N120BND offers low conduction losses and a typical fall time of 140 ns at TJ=150°C. It provides a minimum short circuit withstand time of 8 µs under specified test conditions, supporting robust operation in demanding environments. Typical applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
The device is supplied in a TO-247-3 through-hole package (also listed as supplier device package TO-247-3) and operates over a junction temperature range of -55°C to 150°C. The datasheet marks the part as Pb-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.33 | $5.33 |
| 30+ | $2.98 | $2.98 |
| 120+ | $2.46 | $2.46 |
| 510+ | $2.08 | $2.08 |
| 1,020+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
35 A at TC=25°C; 17 A at TC=110°C per datasheet.
TO-247-3 through-hole package.
-55°C to 150°C.
Existing data marks it RoHS3 compliant and the datasheet indicates Pb-Free; this status has not been independently verified.
140 ns at TJ=150°C.
Yes, it integrates an anti-parallel hyperfast diode.