HGTG10N120BND The HGTG10N120BND is a 1200 V, 35 A NPT N-Channel IGBT from onsemi with an anti-parallel hyperfast diode. Housed in a TO-247-3 through-hole package, it suits high-voltage switching applications with low conduction losses.
Mfr Part #:

HGTG10N120BND

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTG10N120BND is a 1200 V, 35 A NPT N-Channel IGBT from onsemi with an anti-parallel hyperfast diode. Housed in a TO-247-3 through-hole package, it suits high-voltage switching applications with low conduction losses.
Total Stock: 8,777 pcs
$ Price Range: $1.94 - $5.33

HGTG10N120BND Available from 1 distributor

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HGTG10N120BND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulsed)
Collector-Emitter Leakage Current
Current
Fall Time
Gate Charge
Gate-Emitter Voltage (Continuous)
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Short Circuit Withstand Time
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Turn-Off Delay Time
Vce Saturation (Typical/Maximum @ VGE=15 V, IC=10 A, TC=150 °C)
Vce(on) (Max) @ Vge, Ic
Voltage

HGTG10N120BND Description

Short technical summary and product information.

The HGTG10N120BND from onsemi is a Non-Punch Through (NPT) N-Channel IGBT integrating an anti-parallel hyperfast diode. It is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at TC=25°C, with pulsed collector current capability up to 80 A. Maximum power dissipation is 298 W at TC=25°C, and gate-to-emitter voltage is rated at ±20 V continuous. The device features a typical gate charge of 100 nC and collector-emitter saturation voltage of 2.7 V maximum at VGE=15 V and IC=10 A.

 

Designed for moderate-frequency, high-voltage switching, the HGTG10N120BND offers low conduction losses and a typical fall time of 140 ns at TJ=150°C. It provides a minimum short circuit withstand time of 8 µs under specified test conditions, supporting robust operation in demanding environments. Typical applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.

 

The device is supplied in a TO-247-3 through-hole package (also listed as supplier device package TO-247-3) and operates over a junction temperature range of -55°C to 150°C. The datasheet marks the part as Pb-free.

HGTG10N120BND Quick Information

Product Type: IGBT (Insulated-Gate Bipolar Transistor)
Series: NPT
Canonical Name: HGTG10N120BND NPT N-Channel IGBT with Anti-Parallel Hyperfast Diode
Subcategory: Single IGBT

HGTG10N120BND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HGTG10N120BND Estimated Pricing

Qty Low High
1+ $5.33 $5.33
30+ $2.98 $2.98
120+ $2.46 $2.46
510+ $2.08 $2.08
1,020+ $1.94 $1.94

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTG10N120BND Features

  • NPT N-channel IGBT with hyperfast diode.
  • Rated for 1200 V collector-emitter voltage.
  • Supports 35 A continuous collector current.
  • Handles 80 A pulsed collector current.
  • Available in TO-247-3 through-hole package.

HGTG10N120BND Applications

  • Ideal for AC and DC motor controls.
  • Use in power supplies and drivers.
  • Drives solenoids, relays, and contactors.
  • Suitable for high voltage switching applications.

HGTG10N120BND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the HGTG10N120BND?

The maximum collector-emitter voltage is 1200 V.

What is the continuous collector current rating?

35 A at TC=25°C; 17 A at TC=110°C per datasheet.

What package is the HGTG10N120BND available in?

TO-247-3 through-hole package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the HGTG10N120BND RoHS compliant?

Existing data marks it RoHS3 compliant and the datasheet indicates Pb-Free; this status has not been independently verified.

What is the typical fall time?

140 ns at TJ=150°C.

Does the HGTG10N120BND include an anti-parallel diode?

Yes, it integrates an anti-parallel hyperfast diode.

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