| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,648 pcs
|
2648 pcs | On Request | 1 | On Request | On Request | 214 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (390V, 3A, 50Ohm, 15V) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| operating_junction_temperature_max |
The HGTD3N60A4S is an N-channel Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor designed for medium power switching applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 17 A. The device has a typical collector-emitter saturation voltage of 2.7 V at Vge = 15 V and Ic = 3 A, ensuring efficient conduction when fully on.
Key electrical characteristics include a typical total gate charge of 32 nC and switching times of 6 ns turn-on delay and 73 ns turn-off delay under test conditions of 390 V, 3 A, 50 Ω, and 15 V gate drive. The IGBT operates over a junction temperature range of -55°C to 150°C and can dissipate up to 70 W of power.
The HGTD3N60A4S is supplied in a TO-252-3 (DPAK) surface mount package, which is also compliant with DPak (2 Leads + Tab) and SC-63 footprints. This package is suitable for automated assembly and compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 413+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-252-3, DPak (2 Leads + Tab), SC-63; surface mount.
-55°C to 150°C.
RoHS3 Compliant (unverified).
32 nC.
2.7 V maximum at Vge=15V, Ic=3A.
Turn-on delay 6 ns, turn-off delay 73 ns typical at 390V, 3A, 50Ω, 15V.