HGTD1N120BNS9A The HGTD1N120BNS9A is an NPT IGBT from On Semiconductor with a 1200V collector-emitter voltage, 5.3A collector current, and 60W maximum power dissipation. It comes in a surface mount TO-252AA package.
Mfr Part #:

HGTD1N120BNS9A

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTD1N120BNS9A is an NPT IGBT from On Semiconductor with a 1200V collector-emitter voltage, 5.3A collector current, and 60W maximum power dissipation. It comes in a surface mount TO-252AA package.
✓ Total Stock: 6,933 pcs
$ Price Range: $0.58 - $2.29

HGTD1N120BNS9A Available from 4 distributors

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HGTD1N120BNS9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

HGTD1N120BNS9A Description

Short technical summary and product information.

The HGTD1N120BNS9A is an NPT (Non-Punch Through) IGBT manufactured by On Semiconductor. It is designed for high voltage switching applications with a collector-emitter voltage rating of 1200V and a continuous collector current of 5.3A. The device can dissipate up to 60W of power.

 

This IGBT features a standard gate drive with a typical gate charge of 14 nC. Switching characteristics include typical turn-on delay of 15 ns and turn-off delay of 67 ns under test conditions of 960V, 1A, and 82 ohm gate resistor. The collector-emitter saturation voltage is typically 2.9V maximum at 15V gate drive and 1A collector current.

 

The device is housed in a surface mount TO-252-3 (DPak) package, with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 150°C. The input type is standard, suitable for typical gate drive circuits.

 

This component is RoHS3 compliant and has an MSL of 1 (unlimited) as per available data. It is suitable for a variety of power conversion and switching applications where high voltage and moderate current handling are required.

HGTD1N120BNS9A Quick Information

Product Type: Single IGBT
Series: HGTD1N120BNS
Canonical Name: NPT IGBT, 1200V Collector-Emitter, 5.3A Collector, 60W, Surface Mount, TO-252AA
Subcategory: Single IGBT

HGTD1N120BNS9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Unaffected

HGTD1N120BNS9A Estimated Pricing

Qty Low High
1+ $2.29 $2.29
10+ $1.47 $1.47
100+ $1.00 $1.00
500+ $0.79 $0.79
1,000+ $0.73 $0.73
2,500+ $0.62 $0.62
5,000+ $0.58 $0.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTD1N120BNS9A Features

  • NPT IGBT with 1200V collector-emitter voltage.
  • Rated for 5.3A continuous collector current.
  • Maximum power dissipation of 60W.
  • Surface mount TO-252AA package for compact design.
  • Standard gate input for easy drive.

HGTD1N120BNS9A Applications

  • Ideal for high voltage power switching circuits.
  • Used in motor drive and inverter applications.
  • Suitable for power supply and conversion systems.
  • Applicable in induction heating and lighting.

HGTD1N120BNS9A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

1200V

What is the package type?

TO-252-3 (DPak, SC-63) with supplier package TO-252AA

What is the operating temperature range?

-55°C to 150°C (junction)

Is the HGTD1N120BNS9A RoHS compliant?

RoHS3 compliant (unverified)

What is the maximum collector current?

5.3A

What is the switching energy?

Typical turn-on energy 70 µJ, turn-off energy 90 µJ at 960V, 1A, 82 ohm

What is the mounting type?

Surface mount

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