HGT1S7N60A4DS9A HGT1S7N60A4DS9A is a 600V, 34A N-channel IGBT from On Semiconductor in a TO-263AB surface mount package. It features 125W power dissipation and operates from -55°C to 150°C junction temperature.
Mfr Part #:

HGT1S7N60A4DS9A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGT1S7N60A4DS9A is a 600V, 34A N-channel IGBT from On Semiconductor in a TO-263AB surface mount package. It features 125W power dissipation and operates from -55°C to 150°C junction temperature.
Total Stock: 1,600 pcs

HGT1S7N60A4DS9A Available from 1 distributor

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HGT1S7N60A4DS9A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

HGT1S7N60A4DS9A Description

Short technical summary and product information.

The HGT1S7N60A4DS9A is an N-channel IGBT from On Semiconductor designed for power switching applications. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 34A, with a maximum power dissipation of 125W.

 

The device features a low gate charge of 60nC and typical switching energies of 120µJ turn-on and 60µJ turn-off at 390V, 7A, 25Ohm, 15V test conditions. The maximum collector-emitter saturation voltage is 2.7V at Vge=15V and Ic=7A. The reverse recovery time is 34ns.

 

The HGT1S7N60A4DS9A is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package. It operates over a junction temperature range of -55°C to 150°C.

 

This IGBT is suitable for power switching applications such as motor drives, power supplies, and inverters where high voltage and current handling with fast switching are required.

HGT1S7N60A4DS9A Quick Information

Product Type: IGBT
Canonical Name: N-Channel IGBT, 600V, 34A, TO-263AB
Subcategory: Single IGBT

HGT1S7N60A4DS9A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HGT1S7N60A4DS9A Features

  • 600V collector-emitter voltage rating.
  • 34A continuous collector current capability.
  • 125W maximum power dissipation.
  • Surface mount TO-263AB package.
  • RoHS3 compliant and REACH unaffected.

HGT1S7N60A4DS9A Applications

  • Ideal for power switching circuits.
  • Used in motor drive applications.
  • Suitable for inverter designs.
  • For industrial power supply systems.

HGT1S7N60A4DS9A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the HGT1S7N60A4DS9A?

The maximum collector-emitter voltage is 600V.

What is the continuous collector current rating?

The continuous collector current rating is 34A.

What is the power dissipation of this IGBT?

The maximum power dissipation is 125W.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

What is the gate charge of the HGT1S7N60A4DS9A?

The gate charge is 60nC.

What is the package type?

The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, surface mount.

Is the HGT1S7N60A4DS9A RoHS compliant?

The device is listed as RoHS3 compliant.

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