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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Gate Charge | |
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| Reverse Recovery Time (trr) | |
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| Td (on | |
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| Turn-Off Delay Time | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGT1S7N60A4DS9A is an N-channel IGBT from On Semiconductor designed for power switching applications. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 34A, with a maximum power dissipation of 125W.
The device features a low gate charge of 60nC and typical switching energies of 120µJ turn-on and 60µJ turn-off at 390V, 7A, 25Ohm, 15V test conditions. The maximum collector-emitter saturation voltage is 2.7V at Vge=15V and Ic=7A. The reverse recovery time is 34ns.
The HGT1S7N60A4DS9A is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package. It operates over a junction temperature range of -55°C to 150°C.
This IGBT is suitable for power switching applications such as motor drives, power supplies, and inverters where high voltage and current handling with fast switching are required.
The maximum collector-emitter voltage is 600V.
The continuous collector current rating is 34A.
The maximum power dissipation is 125W.
The junction operating temperature range is -55°C to 150°C.
The gate charge is 60nC.
The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, surface mount.
The device is listed as RoHS3 compliant.