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HGT1S20N35G3VLS HGT1S20N35G3VLS is a 20A, 350V N-Channel Logic Level Voltage Clamping IGBT from ON Semiconductor. It features active voltage clamp and ESD protection, suitable for automotive ignition circuits.
Mfr Part #:

HGT1S20N35G3VLS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGT1S20N35G3VLS is a 20A, 350V N-Channel Logic Level Voltage Clamping IGBT from ON Semiconductor. It features active voltage clamp and ESD protection, suitable for automotive ignition circuits.
Total Stock: 3,500 pcs

HGT1S20N35G3VLS Available from 1 distributor

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HGT1S20N35G3VLS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector to Emitter Avalanche Energy
Collector-Emitter Breakdown Voltage
Current
Emitter-Collector Breakdown Voltage
Gate Charge
Gate-Emitter Voltage
Input Type
Mounting Type
Operating Temperature
Power
Power Dissipation Derating
Storage Temperature
Supplier Device Package
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
collector_current (Nominal @ VGE=5.0 V, TC=100 °C)
collector_current (Nominal @ VGE=5.0 V, TC=25 °C)
inductive_switching_current (Nominal @ L=2.3 mH, TC=150 °C)
inductive_switching_current (Nominal @ L=2.3 mH, TC=25 °C)

HGT1S20N35G3VLS Description

Short technical summary and product information.

The HGT1S20N35G3VLS is a 20A, 350V N-Channel Logic Level Voltage Clamping IGBT manufactured by ON Semiconductor. It is specifically designed for automotive ignition coil driver applications, featuring an active voltage clamp between collector and gate for Self Clamped Inductive Switching (SCIS) capability.

 

Key electrical specifications include a collector-emitter breakdown voltage of 375V (minimum), continuous collector current of 20A at both 25°C and 100°C, and a maximum power dissipation of 150W at 25°C. The device operates with a logic-level gate drive voltage of ±10V and exhibits a maximum saturation voltage of 2.8V at 5V gate drive and 20A collector current. The gate charge is 28.7 nC. The device is capable of handling 500 mJ avalanche energy at 25°C.

 

The device includes internal ESD protection diodes on the gate and a series/shunt resistor network for robust gate drive. It is offered in a TO-263AB (D2PAK) surface mount package, as well as TO-220AB and TO-262AA variants. The operating junction temperature range is -40°C to 175°C, making it suitable for harsh automotive environments.

HGT1S20N35G3VLS Quick Information

Product Type: IGBT - Single N-Channel
Canonical Name: HGT1S20N35G3VLS - 20A, 350V N-Channel Logic Level Voltage Clamping IGBT
Subcategory: Single N-Channel IGBT

HGT1S20N35G3VLS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

HGT1S20N35G3VLS Features

  • Logic level gate drive for 5V logic.
  • Active voltage clamp for SCIS capability.
  • 20A continuous collector current rating.
  • 150W maximum power dissipation.
  • Operates up to 175°C junction temperature.

HGT1S20N35G3VLS Applications

  • Automotive ignition coil driver circuits.
  • Self-clamped inductive switching applications.
  • High-temperature automotive modules.

HGT1S20N35G3VLS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the HGT1S20N35G3VLS?

375V minimum at 10mA with 1kΩ gate-emitter resistor.

What is the package type of the HGT1S20N35G3VLS?

TO-263AB (D2PAK) surface mount package.

What is the operating junction temperature range?

-40°C to 175°C.

What is the continuous collector current rating?

20A at VGE=5V, both at TC=25°C and TC=100°C.

What is the gate-emitter voltage range?

±10V maximum.

What is the maximum power dissipation?

150W at TC=25°C, derated at 1.0 W/°C above 25°C.

What is the avalanche energy rating?

500 mJ maximum at 25°C with L=2.3mH.

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