| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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The HGT1S12N60A4DS is a 600V, 54A N-Channel IGBT (Insulated Gate Bipolar Transistor) from On Semiconductor, designed for high-frequency switch mode power supplies. It integrates an anti-parallel hyperfast diode, making it suitable for resonant and soft-switching applications. The device offers a maximum collector-emitter voltage of 600V and a continuous collector current of 54A at 25°C case temperature, derated to 23A at 110°C. With a maximum power dissipation of 167W at 25°C, it requires adequate thermal management.
This IGBT features low on-state voltage (Vce(on) max 2.7V at 15V gate, 12A) and fast switching characteristics, with typical turn-on delay of 17ns, turn-off delay of 96ns, and fall time of 70ns at 125°C. The total gate charge is 78nC, Eon 55µJ, and Eoff 50µJ under test conditions. The anti-parallel diode has a reverse recovery time of 30ns.
Packaged in a D2PAK (TO-263) surface mount package, the HGT1S12N60A4DS is lead-free and RoHS3 compliant (unverified but stated Pb-Free). The operating junction temperature range is -55°C to 150°C. Cross-reference parts include the HGTG12N60A4D (TO-247) and HGTP12N60A4D (TO-220) for through-hole alternatives.
| Qty | Low | High |
|---|---|---|
| 800+ | $2.59 | $2.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
The HGT1S12N60A4DS is supplied in a D²PAK (TO-263) surface mount package, also known as TO-263-3.
-55°C to 150°C.
The HGT1S12N60A4DS is listed as RoHS3 compliant and is lead-free per the datasheet (Pb-Free). However, this compliance status is unverified and based on existing database information.
54A at 25°C case temperature, derated to 23A at 110°C.
167W at 25°C case temperature, with a derating factor of 1.33 W/°C above 25°C.
Maximum 2.7V at VGE=15V, IC=12A.