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HGT1S10N120BNST HGT1S10N120BNST is a 1200V, 35A NPT IGBT from On Semiconductor. It features a saturation voltage of 2.7V and switching energies of 320 µJ (on) and 800 µJ (off).
Mfr Part #:

HGT1S10N120BNST

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGT1S10N120BNST is a 1200V, 35A NPT IGBT from On Semiconductor. It features a saturation voltage of 2.7V and switching energies of 320 µJ (on) and 800 µJ (off).
✓ Total Stock: 2,308 pcs

HGT1S10N120BNST Available from 3 distributors

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HGT1S10N120BNST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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HGT1S10N120BNST Description

Short technical summary and product information.

The HGT1S10N120BNST is an NPT (Non-Punch Through) IGBT from On Semiconductor designed for high-voltage switching applications. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 35 A, it is suitable for power conversion circuits. The device offers a typical turn-on delay time of 23 ns and turn-off delay time of 165 ns, with switching energies of 320 µJ (on) and 800 µJ (off) under test conditions of 960 V, 10 A, and 10 Ω gate resistance at 15 V gate drive. The maximum collector-emitter saturation voltage is 2.7 V at Vge = 15 V and Ic = 10 A. The IGBT is housed in a surface-mount TO-263-3 (D²Pak) package, also known as D²PAK (TO-263), which facilitates efficient heat dissipation. The operating junction temperature range is -55°C to 150°C. Typical applications include motor drives, inverters, and power supplies where high efficiency and fast switching are required.

HGT1S10N120BNST Quick Information

Product Type: Single IGBT
Canonical Name: HGT1S10N120BNST - IGBT, 1200V, 35A, NPT, D²PAK (TO-263)
Subcategory: NPT IGBT

HGT1S10N120BNST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

HGT1S10N120BNST Features

  • NPT IGBT rated for 1200V collector-emitter voltage.
  • Continuous collector current of 35 A.
  • Maximum power dissipation of 298 W.
  • Surface-mount D²PAK (TO-263) package.
  • Low saturation voltage of 2.7 V max.

HGT1S10N120BNST Applications

  • Used in motor drive and inverter circuits.
  • Suitable for power supply converters.
  • Ideal for induction heating systems.
  • Applicable in uninterruptible power supplies (UPS).
  • Designed for high-voltage switching applications.

HGT1S10N120BNST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the HGT1S10N120BNST?

The HGT1S10N120BNST is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, specifically the D²PAK (TO-263) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the HGT1S10N120BNST RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified at this time.

What is the collector-emitter voltage rating?

The collector-emitter voltage rating is 1200 V.

What is the continuous collector current rating?

The continuous collector current rating is 35 A.

What are the switching energy values?

Typical turn-on switching energy is 320 µJ and turn-off switching energy is 800 µJ, tested at 960V, 10A, 10Ω, 15V.

What is the gate charge of this IGBT?

The gate charge is 100 nC.

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