| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,651 pcs
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1651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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575 pcs
|
575 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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82 pcs
|
82 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
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| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
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| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGT1S10N120BNST is an NPT (Non-Punch Through) IGBT from On Semiconductor designed for high-voltage switching applications. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 35 A, it is suitable for power conversion circuits. The device offers a typical turn-on delay time of 23 ns and turn-off delay time of 165 ns, with switching energies of 320 µJ (on) and 800 µJ (off) under test conditions of 960 V, 10 A, and 10 Ω gate resistance at 15 V gate drive. The maximum collector-emitter saturation voltage is 2.7 V at Vge = 15 V and Ic = 10 A. The IGBT is housed in a surface-mount TO-263-3 (D²Pak) package, also known as D²PAK (TO-263), which facilitates efficient heat dissipation. The operating junction temperature range is -55°C to 150°C. Typical applications include motor drives, inverters, and power supplies where high efficiency and fast switching are required.
The HGT1S10N120BNST is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, specifically the D²PAK (TO-263) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified at this time.
The collector-emitter voltage rating is 1200 V.
The continuous collector current rating is 35 A.
Typical turn-on switching energy is 320 µJ and turn-off switching energy is 800 µJ, tested at 960V, 10A, 10Ω, 15V.
The gate charge is 100 nC.