| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The HFU1N80 is an N-Channel MOSFET manufactured by SemiHow, identified as POWER in some listings. This component is designed for power switching applications and features a high Drain-Source Voltage rating of 800V.
As an N-Channel MOSFET, it is suitable for various electronic circuits requiring efficient switching and voltage control. The component is listed as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is not sensitive to moisture under normal conditions.
While specific details on Rds(on), gate charge, and operating temperature are not provided in the available data, the 800V rating suggests suitability for applications requiring significant voltage handling capabilities. Further details would typically be found in the manufacturer's datasheet.
This MOSFET is part of the broader category of Transistors - FETs, MOSFETs - Single, used extensively in power electronics, consumer electronics, and industrial control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage of the HFU1N80 is 800V.
The HFU1N80 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the HFU1N80 is 1 Unlimited.
The REACH status for the HFU1N80 is REACH Unaffected.