HFA35HB60C
Infineon
The Infineon HFA35HB60C is an ultrafast, soft recovery diode designed for high frequency power conditioning systems. It offers a 600V reverse voltage and a typical reverse recovery time of 88ns.
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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The HFA35HB60C from Texas Instruments is an ultrafast, soft recovery diode optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its extensive characterization of recovery behavior simplifies loss calculations in operating conditions.
Key electrical specifications include a 600V reverse voltage, a typical forward voltage of 1.9V, a typical reverse recovery time of 88ns, and a di(rec)M/dt of 300A/μs. The soft recovery characteristic often eliminates the need for a snubber circuit.
This diode is housed in a hermetic TO-254AA through-hole package with electrically isolated ceramic eyelets. It is qualified according to MIL-PRF-19500 for space applications, making it suitable for demanding environments.
Potential applications include DC-DC converters, motor drives, and other power converters where switching losses are a significant factor. The device is rated ESD Class 3B per MIL-STD-750.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 600V.
The typical forward voltage is 1.9V.
The typical reverse recovery time is 88ns.
The ESD rating is Class 3B per MIL-STD-750, Method 1020.
The device is packaged in a TO-254AA through-hole case.
The typical di(rec)M/dt is 300A/μs.