| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Reneas HFA3127BZ is a radio frequency (RF) bipolar junction transistor array containing five NPN transistors in a single 16-pin small-outline IC (SOIC) package. It is designed for surfae-mount assembly, making it suitable for compact RF circuits.
Electrical specifications include a collector-emitter voltage rating of 12 V, a collector current of 65 mA, and a transition frequency of 8 GHz. The minimum DC current gain (hFE) is 40 at a test condition of 10 mA collector current and 2 V collector-emitter voltage. The typical noise figure is 3.5 dB at 1 GHz.
Thermal characteristics include a power dissipation of 150 mW and a maximum operating junction temperature of 150°C. The device is supplied in a 16-SOIC package (0.154" body width, 3.90 mm width) and is compatible with surfae-mount soldering processes.
This component is typically used in RF amplification, oscillation, and switching applications where multiple NPN transistors are needed in a single package. The part is marked as RoHS3 compliant and REACH unaffected, though these compliane claims are unverifed.
The colletor-emiter voltage is 12 V.
The device is offered in a 16-SOIC (0.154", 3.90mm Width) surfae-mount package.
The maximum junction temperature is 150°C.
It is marked as RoHS3 compliant, but this status is unverifed and has low confidence.
The transitin frequency is 8 Gz.
The minium DC current gain (hFE) is 40 at Ic=10 mA and Vce=2 V.
The typical noise figre is 3.5 dB at 1 Gz.