HFA30PB120 The HFA30PB120 is a 1200V, 30A ultrafast soft recovery diode from Vishay. It features a typical forward voltage of 2.4V at 30A and is housed in a TO-247AC package.
Mfr Part #:

HFA30PB120

Available from 1 distributors
Mfr Name: Vishay Dale
Vishay Dale
The HFA30PB120 is a 1200V, 30A ultrafast soft recovery diode from Vishay. It features a typical forward voltage of 2.4V at 30A and is housed in a TO-247AC package.
Total Stock: 2,500 pcs
$ Price Range: $10.53

HFA30PB120 Available from 1 distributor

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HFA30PB120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (VBR) (Minimum)
Current
Forward Voltage (Typical/Maximum @ IF = 30 A, TJ = 25 °C)
Forward Voltage (Typical/Maximum @ IF=60 A, TJ=25 °C)
Industrial Grade
Maximum Junction Temperature (TJ)
Mounting Type
Non-repetitive Peak Forward Surge Current (IFSM)
Operating Temperature
Peak Reverse Recovery Current (IRRM) (Typical)
Power Dissipation (Maximum @ TC=100 °C)
Power Dissipation (Maximum @ TC=25 °C)
Recovery Current Slope (dI(rec)M/dt) (Typical) @ 125°C
Reverse Leakage Current (Maximum @ Vr = 0.8 x Vr rated, Tj = 125 °C)
Reverse Leakage Current (Maximum @ Vr = Vr rated, Tj = 25 °C)
Reverse Recovery Charge (Qrr) (Typical)
Reverse Recovery Time (Typical/Nominal)
Reverse Recovery Time (trr)
Reverse Voltage (VR)
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage

HFA30PB120 Description

Short technical summary and product information.

The HFA30PB120 is a state-of-the-art ultrafast soft recovery diode from Vishay's HEXFRED series. It is rated for a reverse voltage of 1200V and an average forward current of 30A. The diode exhibits a typical forward voltage of 2.4V at 30A and 25°C, and a maximum forward voltage of 4.1V under the same conditions.

 

Its ultrafast recovery time of 47 ns (typical) and low reverse recovery charge of 120 nC (typical) make it ideal for high-frequency switching applications. The device is designed for use as a companion diode for IGBTs and MOSFETs, helping to reduce switching losses and snubbing requirements.

 

The HFA30PB120 is available in a through-hole TO-247-2 package (TO-247AC modified) and operates over a junction temperature range of -55°C to 150°C. It is rated RoHS compliant and REACH unaffected.

HFA30PB120 Quick Information

Product Type: Ultrafast Recovery Diode
Series: HEXFRED
Canonical Name: HFA30PB120 Ultrafast Soft Recovery Diode, 1200V, 30A
Subcategory: Ultrafast Recovery Diode

HFA30PB120 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected

HFA30PB120 Estimated Pricing

Qty Low High
500+ $10.53 $10.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

HFA30PB120 Features

  • Ultrafast recovery with 47 ns typical trr.
  • 1200V reverse voltage, 30A forward current.
  • Low forward voltage of 2.4V typical.
  • Avalanche rated for rugged operation.
  • Wide temperature range -55°C to 150°C.

HFA30PB120 Applications

  • Ideal for power supplies and inverters.
  • Used as companion diode for IGBTs.
  • Reduces snubbing and component count.
  • Suitable for high-frequency switching.
  • Motor drive and conversion systems.

HFA30PB120 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the HFA30PB120?

The reverse voltage (VR) is 1200 V.

What is the average forward current rating?

The average forward current (IF(AV)) is 30 A.

What is the forward voltage drop at 30 A?

At 30 A and 25°C, the typical forward voltage is 2.4 V and the maximum is 4.1 V.

What is the reverse recovery time?

The typical reverse recovery time (trr) is 47 ns.

What package is the HFA30PB120 available in?

It is available in a TO-247-2 package (TO-247AC modified) with through-hole mounting.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the reverse leakage current?

The maximum reverse leakage current is 40 µA at 25°C and 4000 µA at 125°C.

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